DM P3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test In Production I D V R (BR)DSS DS(on) T = +25C Low On-Resistance C Fast Switching Speed 25m V = -10V -27A GS -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m V = -4.5V -22A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: TO252 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.33 grams (Approximate) Power Management Functions D D TO252 G D S G S Equivalent Circuit Top View Top View Pin-Out Ordering Information (Notes 4) Product Case Packaging DMP3028LK3-13 TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DM P3028LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -27 C A I D State -22 T = +70C C Continuous Drain Current (Note 6) V = -10V GS T = +25C -11 A t<10s I A D -8.6 T = +70C A Maximum Body Diode Continuous Current I -2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -40 A DM Avalanche Current (Note 7) L = 0.1mH IAS -22 A Avalanche Energy (Note 7) L = 0.1mH EAS 24 mJ Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.6 T = +25C A Total Power Dissipation (Note 5) W P D 1.0 T = +70C A Steady state 77 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 34 2.8 T = +25C A Total Power Dissipation (Note 6) W P D 1.8 T = +70C A Steady state 45 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 29 C/W Thermal Resistance, Junction to Case (Note 6) 4.5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -30V, V = 0V J DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1 -2.4 V V V = V , I = -250A GS(th) DS GS D 20 25 V = -10V, I = -7A GS D Static Drain-Source On-Resistance m R DS(ON) 29 38 V = -4.5V, I = -6.2A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1241 pF iss V = -15V, V = 0V DS GS Output Capacitance C 147 pF oss f = 1.0MHz Reverse Transfer Capacitance C 110 pF rss Gate Resistance R 15 V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = -10V) Q 22 nC GS g 11 nC Total Gate Charge (VGS = -4.5V) Qg VDS = -15V, ID = -7A Gate-Source Charge 3.5 nC Q gs Gate-Drain Charge 4.7 nC Q gd Turn-On Delay Time 9.7 ns t D(on) V = -10V, V = -15V, GS DD Turn-On Rise Time 17.1 ns t r RGEN = 6 Turn-Off Delay Time t 60.5 ns D(off) I = -7A D Turn-Off Fall Time t 40.4 ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = 25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3028LK3 December 2014 Diodes Incorporated www.diodes.com Document Number DS37257 Rev. 2 - 2