DMP3028LPSQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low R Minimizes On-State Losses DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C Density End Products 28m V = -10V -21A GS 100% Unclamped Inductive Switching Ensures More Reliability -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 38m V = -4.5V -18A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: PowerDI5060-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D S Pin1 D S D G D G S Top View Internal Schematic Top View Bottom View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMP3028LPSQ-13 2,500/Tape & Reel PowerDI5060-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3028LPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C -21 C Continuous Drain Current, V = -10V (Note 8) I A GS D -17 T = +70C C Maximum Continuous Body Diode Forward Current (Note 8) -20 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -70 A I DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) -70 A I SM Avalanche Current, L = 0.1mH (Note 9) I -21.4 A AS Avalanche Energy, L = 0.1mH (Note 9) E 22 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.28 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State 100 C/W R JA Total Power Dissipation (Note 7) P 2.12 W D Thermal Resistance, Junction to Ambient (Note 7) Steady State 60 C/W R JA Total Power Dissipation (Note 8) P 35 W D Thermal Resistance, Junction to Case (Note 8) 3.0 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage -1.0 -1.3 -2.4 V VGS(TH) VDS = VGS, ID = -250A 18 28 V = -10V, I = -7A GS D Static Drain-Source On-Resistance R m DS(ON) 28 38 V = -4.5V, I = -6.2A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance 1372 pF C iss V = -15V, V = 0V, DS GS Output Capacitance C 161 pF oss f = 1.0MHz Reverse Transfer Capacitance C 127 pF rss Gate Resistance R 8.5 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q 11 nC GS g Total Gate Charge (V = -10V) Q 22 nC GS g V = -15V, I = -7A DS D Gate-Source Charge Q 3.0 nC gs Gate-Drain Charge 3.7 nC Q gd Turn-On Delay Time 4.8 ns t D(ON) Turn-On Rise Time 5.5 ns t R V = -15V, V = -10V, DD GS R = 6, I = -7A Turn-Off Delay Time t 32.8 ns g D D(OFF) Turn-Off Fall Time t 17.74 ns F Reverse Recovery Time t 10.8 ns RR I = -7A, dI/dt = 100A/s S Reverse Recovery Charge Q 3.4 nC RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3028LPSQ October 2017 Diodes Incorporated www.diodes.com Document number: DS39811 Rev. 3 - 2 NEW PRODUCT ADVANCE INFORMATION