NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures on state losses are minimized I max DS(ON) D BV R max DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 20m V = -10V -9.5A GS Occupies just 33% of the board area occupied by SO-8 enabling -30V smaller end product 29m V = -5V -8.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: PowerDI 3333-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Drain Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3035SFG-7 PowerDI3333-8 2000/Tape & Reel DMP3035SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV DMP3035SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -9.5 A I A D State -6.7 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -12.5 A t < 10s A I D -10.0 T = +70C A Steady T = +25C -7.0 A I A D State -5.5 T = +70C A Continuous Drain Current (Note 6) V = -5V GS T = +25C -10.0 A t < 10s A I D -8.0 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -70 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -3.6 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.95 W D Steady State 135 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 65 C/W Total Power Dissipation (Note 6) P 2.3 W D Steady State 55 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 26 C/W Thermal Resistance, Junction to Case (Note 6) 6.14 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 100 100 P = 10 s W R DS(ON) 90 Single Pulse Limited R = 61C/W JA 80 R = r * R JA(t) (t) JA T - T = P * R 10 ) J A JA(t) A 70 ( T N DC E 60 R R P = 10s U W 1 50 C P = 1s W N P = 100ms W I 40 A P = 10ms R W D P = 1ms W 30 , D P = 100s W I 0.1 - 20 T = 150C J(max) T = 25C A 10 Single Pulse 0.01 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000 -V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 2 Single Pulse Maximum Power Dissipation Fig. 1 SOA, Safe Operation Area 2 of 7 DMP3035SFG December 2018 Diodes Incorporated www.diodes.com Document number: DS35440 Rev. 4 - 3 -I , DRAIN CURRENT (A) D P , PEAK TRANSIENT POIWER (W) (PK)