DMP3050LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 50m V = -10V -4.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 75m V = -4.5V -3.7A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: TSOT26 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Weight: 0.013grams (Approximate) DC-DC Converters D D 1 6 D TSOT26 D D 2 5 G 3 4 G S S Top View Device Schematic Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3050LVT-7 TSOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3050LVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage (Note 5) V 25 V GSS Steady T = +25C -4.5 A I A D State -3.5 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -5.2 A t<10s A I D -4.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I -2 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -25 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.6 A Total Power Dissipation (Note 6) W P D 1.0 T = +70C A Steady State 78 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 49 C/W Steady State Thermal Resistance, Junction to Case (Note 6) 13 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 - - V BVDSS VGS = 0V, ID = -250A Zero Gate Voltage Drain Current - - -1 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1.0 - -2.0 V V V = V , I = -250A GS(TH) DS GS D - 36 50 V = -10V, I = -4.5A GS D Static Drain-Source On-Resistance R m DS(ON) - 56 75 V = -4.5V, I = -3A GS D Forward Transfer Admittance - 7.2 - S Y V = -5V, I = -5A fs DS D Diode Forward Voltage V - -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 620 - pF iss V = -15V, V = 0V, DS GS Output Capacitance C - 83 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 62 - pF rss Gate Resistance - 10.8 - Rg VDS = 0V, VGS = 0V, f = 1.0MHz - 5.1 - nC Total Gate Charge (V = -4.5V) Q GS g - 10.5 - nC Total Gate Charge (V = -10V) Q GS g V = -15V, I = -6A DS D Gate-Source Charge - 1.8 - nC Q gs Gate-Drain Charge - 1.9 - nC Q gd Turn-On Delay Time - 6.8 - ns t D(ON) Turn-On Rise Time t - 4.9 - ns V = -15V, V = -10V, R DD GS Turn-Off Delay Time t - 28.4 - ns R = 6, I = -1A D(OFF) g D Turn-Off Fall Time t - 12.4 - ns F Notes: 5. AEC-Q101 V maximum is 20V. GS 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3050LVT April 2016 Diodes Incorporated www.diodes.com Document number: DS35748 Rev. 4 - 2 NEW PRODUCT