S D D D G D DMP3056LDM P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Threshold Voltage I D V R (BR)DSS DS(on) max Low On-Resistance T = 25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 45m V = -10V -4.3A GS -30V Halogen and Antimony Free. Green Device (Note 3) 65m V = -4.5V -3.3A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: SOT26 state resistance (R ) and yet maintain superior switching DS(on) Case Material Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management applications. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Applications Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram General Purpose Interfacing Switch Weight: 0.008 grams (approximate) Power Management Functions Analog Switch SOT26 Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Qualification Case Packaging DMP3056LDM-7 Commercial SOT26 3000/Tape & Reel DMP3056LDMQ-7 Automotive SOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3056LDM Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady State T = +25CI -4.3 A A D Continuous Drain Current (Note 6) V = 10V GS t < 10s T = +25CI -5.8 A A D Maximum Continuous Body Diode Forward Current (Note 6) -2.3 A I S -13 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25C P 1.25 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) 100 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.5 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) 86 R JA C/W Thermal Resistance, Junction to Case R 15.6 JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = 0V, V = -30V J DSS GS DS 100 V = 20V, V = 0V GS DS Gate-Body Leakage Current I nA GSS 800 V = 25V, V = 0V GS DS Gate Threshold Voltage -1.0 -2.1 V V V = V , I = -250A GS(th) GS DS D 45 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS (ON) 65 V = -4.5V, I = -4.2A GS D Forward Transconductance g 8 S V = -10V, I = -4.3A FS DS D Diode Forward Voltage V -1.2 V V = 0V, I = -1.7A SD GS S DYNAMIC PARAMETERS (Note 8) Input Capacitance C 948 pF iss V = 0V, V = -25V, GS DS Output Capacitance C 105 pF oss f = 1.0MHz Reverse Transfer Capacitance C 100 pF rss SWITCHING CHARACTERISTICS (Note 8) V = -15V, V = -4.5V, DS GS 10.1 nC Q G Total Gate Charge I = -6A D Q 21.1 G V = -15V, V = -10V, DS GS Gate-Source Charge Q 2.8 nC GS I = -6A D Gate-Drain Charge Q 3.2 GD Gate Resistance R 13.15 V = 0V, V = 0V, f = 1MHz g DS GS Turn-On Delay Time t 10.2 d(on) Rise Time t 6.6 r V = -15V, V = -10V, DS GS ns Turn-Off Delay Time 50.1 I = -1A, R = 6.0 t D G d(off) Fall Time 22.3 t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 December 2012 DMP3056LDM Diodes Incorporated www.diodes.com Document number: DS31449 Rev. 11 - 2