DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual P-Channel MOSFET I D V R (BR)DSS DS(on) max T = +25C Low On-Resistance A Low Gate Threshold Voltage 45m V = -10V -6.9A GS -30V Low Input Capacitance 65m V = -4.5V -5.1A GS Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the Qualified to AEC-Q101 Standards for High Reliability on-state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SO-8 Applications Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072g (approximate) SO-8 D1 D2 S1 D1 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 TOP VIEW TOP VIEW P-Channel MOSFET P-Channel MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3056LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3056LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 5) Steady T = +25C -6.9 A I A D State -5.8 T = +70C A Pulsed Drain Current (Note 6) -24 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 5) 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS 100 V = 20V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 25V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1 -1.7 -2.1 V V = V , I = -250A GS(th) DS GS D V = -10V, I = -6.0A 45 GS D Static Drain-Source On-Resistance R m DS (ON) 65 V = -4.5V, I = -5.0A GS D Forward Transconductance g 8 S V = -10V, I = -5.3A fs DS D Diode Forward Voltage (Note 7) V -0.5 -1.2 V V = 0V, I = -1.7A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 722 pF iss V = -25V, V = 0V DS GS Output Capacitance C 114 pF oss f = 1.0MHz Reverse Transfer Capacitance C 92 pF rss V = 0V, V = 0V DS GS Gate Resistance R 3.3 G f = 1.0MHz SWITCHING CHARACTERISTICS V = -15V, V = -4.5V, DS GS 6.8 nC Q G I = -6A Total Gate Charge D Q 13.7 G V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.6 nC GS I = -6A D Gate-Drain Charge Q 4.2 GD Turn-On Delay Time t 6.4 d(on) Rise Time t 5.3 r V = -15V, V = -10V, DS GS ns Turn-Off Delay Time 26.5 I = -1A, R = 6.0 t D G d(off) Fall Time 14.7 t f Notes: 5. Device mounted on 2 oz. 1 x 1 Copper pads on 2 x 2 FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 January 2014 DMP3056LSD Diodes Incorporated www.diodes.com Document number: DS31420 Rev. 7 - 2 NEW PRODUCT