DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOP-8L 45m V = -10V Case Material: Molded Plastic, Green Molding Compound. GS UL Flammability Classification Rating 94V-0 65m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold Voltage Terminals Connections: See Diagram Low Input Capacitance Terminals: Finish - Matte Tin annealed over Copper lead Fast Switching Speed frame. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Marking Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Ordering Information: See Page 4 Gree Device (Note 4) Weight: 0.072g (approximate) Qualified to AEC-Q101 Standards for High Reliability SOP-8L S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 1) Steady T = 25C -7.1 A I A D State -6.0 T = 70C A Pulsed Drain Current (Note 3) -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 1) 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 1. Device mounted on 1 x 1 2 oz. Copper pads on 2 x 2 FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc. sGree policy can be found on our website at DMP3056LSS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS V = 20V, V = 0V 100 GS DS Gate-Source Leakage I nA GSS 800 V = 25V, V = 0V GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage -1 1.7 -2.1 V V V = V , I = -250A GS(th) DS GS D 45 V = -10V, I = -6.0A GS D Static Drain-Source On-Resistance R m DS (ON) 65 V = -4.5V, I = -5.0A GS D Forward Transconductance g 8 S V = -10V, I = -5.3A fs DS D Diode Forward Voltage (Note 5) V -0.5 -1.2 V V = 0V, I = -1.7A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 722 pF iss V = -25V, V = 0V DS GS Output Capacitance C 114 pF oss f = 1.0MHz Reverse Transfer Capacitance C 92 pF rss V = 0V, V = 0V DS GS Gate Resistance R 3.3 G f = 1.0MHz SWITCHING CHARACTERISTICS V = -15V, V = -4.5V, DS GS Q 6.8 nC G I = -6A Total Gate Charge D Q 13.7 G V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.6 nC GS I = -6A D Gate-Drain Charge Q 4.18 GD Turn-On Delay Time 6.4 t d(on) Rise Time 5.3 t V = -15V, V = -10V, r DS GS ns Turn-Off Delay Time 26.5 I = -1A, R = 6.0 t D G d(off) Fall Time 14.7 t f Notes: 5. Short duration pulse test used to minimize self-heating effect. 10 12 11 9 10 V = -10V GS V = 5V DS 8 Pulsed 9 V = -4.5V GS 7 8 6 7 6 5 5 4 T = 150C A V = -3.0V 4 GS T = 125C 3 A 3 T = 85C T = 25C A A 2 V = -1.5V GS 2 V = -1.0V T = -55C GS V = -2.5V A GS 1 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 4 September 2008 DMP3056LSS Diodes Incorporated www.diodes.com Document number: DS31419 Rev. 6 - 2 NEW PRODUCT -I , DRAIN CURRENT (A) D -I , DRAIN CURRENT (A) D