DMP3085LSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance Package V R (BR)DSS DS(ON) MAX T = +25C A Low Input Capacitance 70m V = -10V -3.9A GS Fast Switching Speed -30V SO-8 95m V = -4.5V -3.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper lead frame Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) D1 D2 S1 D1 SO-8 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3085LSD-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See DMP3085LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A -3.9 A I D State -3.1 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -4.9 A t<10s I A D -3.9 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I -2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 20 A DM Thermal Characteristics Characteristic Symbol Value Units T = +25C 1.1 A Total Power Dissipation (Note 5) P W D T = +70C 0.7 A Steady State 107 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 70 T = +25C 1.7 A Total Power Dissipation (Note 6) W P D T = +70C 1.1 A Steady State 75 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case R 14.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V =-30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1 -3 V V V = V , I = -250A GS(th) DS GS D 50 70 V = -10V, I = -5.3A GS D Static Drain-Source On-Resistance m R DS (ON) 75 95 V = -4.5V, I = -4.2A GS D Forward Transfer Admittance Y 5.8 S V = -5V, I = -5.3A fs DS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 563 iss Output Capacitance C 48 pF VDS = -25V, VGS = 0V, f = 1.0MHz oss Reverse Transfer Capacitance C 41 rss Gate Resistance 10.3 R V = 0V, V = 0V, f = 1.0MHz G DS GS 5.2 Total Gate Charge (V = -4.5V) Q GS g 11 Total Gate Charge (V = -10V) Q GS g nC V = -15V, I = -3.8A DS D Gate-Source Charge Q 1.7 gs Gate-Drain Charge Q 1.9 gd Turn-On Delay Time t 4.8 D(on) Turn-On Rise Time t 5 r VDS = -15V, VGS = -10V, nS ID = -1A, RG = 6.0 Turn-Off Delay Time t 31 D(off) Turn-Off Fall Time t 14.6 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = 25C. AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 May 2013 DMP3085LSD Diodes Incorporated www.diodes.com Document number: DS36194 Rev. 1 - 0