DMP3098LDM P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low R : Case: SOT-26 DS(ON) Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m V = -10V GS Moisture Sensitivity: Level 1 per J-STD-020D 115m V = -4.5V GS Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead Free By Design/RoHS Compliant (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 4 Gree Device (Note 4) Ordering Information: See page 4 Weight: 0.008 grams (approximate) SOT-26 D D S D D G TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 1) Continuous T = 25C A -4.0 A I D -3.0 T = 70C A Pulsed Drain Current (Note 2) -14 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 1.25 W D Thermal Resistance, Junction to Ambient (Note 1) Steady-State 100 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 1. Device mounted on 1 x1 , FR-4 PC board on 0.1in. pads on 2 oz. Copper pads and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc sGree policy can be found on our website at DMP3098LDM Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV -30 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current T = 25C I -1 A V = -30V, V = 0V J DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 20V GSS DS GS Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(th) DS GS D On State Drain Current (Note 5) I -15 A V = -4.5V, V = -5V D (ON) GS DS V = -10V, I = -4.0A 56 65 GS D Static Drain-Source On-Resistance (Note 5) R m DS (ON) 115 98 V = -4.5V, I = -3.0A GS D Forward Transconductance (Note 5) 5.3 S g V = -10V, I = -4.0A FS DS D Diode Forward Voltage (Note 5) V 0.79 -1.2 V I = -1.7A, V = 0V SD S GS DYNAMIC PARAMETERS (Note 6) Input Capacitance C 336 pF iss V = -25V, V = 0V DS GS Output Capacitance C 70 pF oss f = 1.0MHz Reverse Transfer Capacitance C 49 pF rss Gate Resistance 4.6 R V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS 4.0 V = -15V, V = -4.5V, I = -5.0A DS GS D Total Gate Charge Q g 7.8 V = -15V, V = -10V, I = -5.0A DS GS D nC Gate-Source Charge Q 1.0 V = -15V, V = -4.5V, I = -5.0A gs DS GS D Gate-Drain Charge Q 2.5 V = -15V, V = -4.5V, I = -5.0A gd DS GS D Turn-On Delay Time 6.0 t d(on) Rise Time 5.0 t V = -15V, V = -10V, r DS GS ns Turn-Off Delay Time 17.6 I = -1.0A, R = 6.0 t D G d(off) Fall Time 9.5 t f Notes: 5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing. 20 20 V = -5V DS T = 150C A V = -10V 16 16 GS T = 125C A T = 25C A T = -55C A 12 V = -4.5V 12 GS 8 8 4 4 V = -3.0V GS V = -2.5V V = -1.5V GS GS 0 0 01 2 3 4 5 12 3 4 5 6 -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 4 October 2008 DMP3098LDM Diodes Incorporated www.diodes.com Document number: DS31446 Rev. 3 - 2 NEW PRODUCT -I , DRAIN CURRENT (A) D -I , DRAIN CURRENT (A) D