DMP3098LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOP-8L 65m V = -10V Case Material: Molded Plastic, Green Molding Compound. GS UL Flammability Classification Rating 94V-0 115m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold Voltage Terminals Connections: See Diagram Low Input Capacitance Terminals: Finish - Matte Tin annealed over Copper lead Fast Switching Speed frame. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Marking Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Ordering Information: See Page 4 Gree Device (Note 4) Weight: 0.072g (approximate) Qualified to AEC-Q101 Standards for High Reliability SOP-8L S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage -30 V V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 1) Steady T = 25C -5.3 A I A D State -4.7 T = 70C A Pulsed Drain Current (Note 3) -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 1) 50 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 1. Device mounted on 2 oz. 1 x 1 Copper pads on 2 x 2 FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc. sGree policy can be found on our website at DMP3098LSS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V -1 -2.1 V V = V , I = -250A GS(th) DS GS D 56 65 V = -10V, I = -5.3A GS D Static Drain-Source On-Resistance R m DS (ON) 98 115 V = -4.5V, I = -4.2A GS D Forward Transconductance 5.2 S g V = -10V, I = -5.3A fs DS D Diode Forward Voltage (Note 5) -0.5 -1.2 V V V = 0V, I = -2A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 336 pF C iss V = -25V, V = 0V DS GS Output Capacitance C 70 pF oss f = 1.0MHz Reverse Transfer Capacitance C 49 pF rss V = 0V, V = 0V DS GS Gate Resistance 4.6 R G f = 1.0MHz SWITCHING CHARACTERISTICS V = -15V, V = -4.5V, DS GS 4.0 nC Q G Total Gate Charge I = -5.0A D 7.8 Q G V = -15V, V = -10V, DS GS nC Gate-Source Charge Q 1.0 GS I = -5.0A D Gate-Drain Charge Q 2.5 GD Turn-On Delay Time t 6.0 d(on) Rise Time t 5.0 V = -15V, V = -10V, r DS GS ns Turn-Off Delay Time t 17.6 I = -1A, R = 6.0 d(off) D G Fall Time t 9.5 f Notes: 5. Short duration pulse test used to minimize self-heating effect. 20 20 V = -5V DS T = 150C A V = -10V 16 GS 16 T = 125C A T = 25C A T = -55C A 12 V = -4.5V 12 GS 8 8 4 4 V = -3.0V GS V = -1.5V V = -2.5V GS GS 0 0 01 2 3 4 5 12 3 4 5 6 -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 5 September 2008 DMP3098LSS Diodes Incorporated www.diodes.com Document number: DS31265 Rev. 4 - 2 NEW PRODUCT -I , DRAIN CURRENT (A) D -I , DRAIN CURRENT (A) D