DMP3099L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D V R max (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 65m V = -10V -3.8A GS -30V Low Input/Output Leakage 99m V = -4.5V -3.0A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Terminal Connections: See Diagram Weight: 0.008 grams (approximate) D SOT23 G S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Compliance Case Packaging DMP3099L-7 Standard SOT23 3000/Tape & Reel DMP3099L-13 Standard SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3099L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -3.8 A A Drain Current (Note 5) V = -10V I GS D State -2.9 T = +70C A Pulsed Drain Current (Note 6) I -11 A DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.08 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 115 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -800 nA V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(th) DS GS D 65 V = -10V, I = -3.8A GS D Static Drain-Source On-Resistance R m DS(ON) 99 V = -4.5V, I = -3.0A GS D Forward Transfer Admittance Y 3.6 S V = -5V, I = -2.7A fs DS D Diode Forward Voltage (Note 6) V -1.26 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 563 pF iss V = -25V, V = 0V, DS GS Output Capacitance C 48 pF oss f = 1.0MHz Reverse Transfer Capacitance C 41 pF rss Gate Resistance R 10.3 V = 0V V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 8) V = -15V, V = -4.5V, DS GS 5.2 Total Gate Charge Q I = -3.8A g D 11 nC V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.7 gs I = -3.8A D Gate-Drain Charge Q 1.9 gd Turn-On Delay Time t 4.8 d(on) Rise Time t 5.0 V = -15V, V = -10V, r DS GS ns I = -1A, R = 6.0 Turn-Off Delay Time t 31 D G d(off) Fall Time t 15 f 2 Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in. copper pads and t 5 sec. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2013 DMP3099L Diodes Incorporated www.diodes.com Document number: DS36081 Rev. 3 - 2 NEW PRODUCT