X-On Electronics has gained recognition as a prominent supplier of DMP3099L-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP3099L-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP3099L-7 Diodes Incorporated

Name: DMP3099L-7
Brand: Diodes Incorporated
SKU: DMP3099L7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMP3099L-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMP3099L-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
Datasheet:	DMP3099L-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.072 ea
Line Total: USD 0.36

Availability - 126871
Ship by Wed. 14 May to Mon. 19 May

MOQ: 5 Multiples: 5
Pack Size: 5

DMP3099L-7 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

1178550

Ship by Wed. 07 May to Tue. 13 May

MOQ : 5222
Multiples : 3000

5222 : USD 0.0498
9000 : USD 0.0486
15000 : USD 0.0462
45000 : USD 0.0451
75000 : USD 0.0441

126871

Ship by Wed. 14 May to Mon. 19 May

MOQ : 5
Multiples : 5

5 : USD 0.072
50 : USD 0.0568
150 : USD 0.05
500 : USD 0.0336
3000 : USD 0.0289
6000 : USD 0.0279

919723

Ship by Mon. 05 May to Wed. 07 May

MOQ : 1
Multiples : 1

1 : USD 0.275
10 : USD 0.1413
100 : USD 0.0804
1000 : USD 0.0693
3000 : USD 0.0484
6000 : USD 0.044
24000 : USD 0.0429

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

3.8 A 3.8 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

65 mOhms 65 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.08 W 1.08 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

11 nC 11 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Dmp3099 Dmp3099

Transistor Type

1 P - Channel 1 P - Channel

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

15 ns 15 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

5 ns 5 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

31 ns 31 ns

Typical Turn-On Delay Time

4.8 ns 4.8 ns

Category

MOSFET MOSFET

Brand Category

Diodes Incorporated Diodes Incorporated

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We are delighted to provide the DMP3099L-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP3099L-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMP3099L-7 with MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A manufactured by Diodes Incorporated is a 30V p-channel enhancement mode field-effect transistor (MOSFET). It is designed for operation from -30V to -10V, with a drain current of up to 3.8A. The on-state resistance of the device is 65mOhm. The device features a low voltage gate drive, low temperature operation, and low power consumption. It is suitable for use in a variety of applications, such as power management, motor drive, lighting control, and more.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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Availability	Price	Buy Price	Quantity
1178550 Ship by Wed. 07 May to Tue. 13 May MOQ : 5222 Multiples : 3000	5222 : USD 0.0498 9000 : USD 0.0486 15000 : USD 0.0462 45000 : USD 0.0451 75000 : USD 0.0441

126871 Ship by Wed. 14 May to Mon. 19 May MOQ : 5 Multiples : 5	5 : USD 0.072 50 : USD 0.0568 150 : USD 0.05 500 : USD 0.0336 3000 : USD 0.0289 6000 : USD 0.0279

919723 Ship by Mon. 05 May to Wed. 07 May MOQ : 1 Multiples : 1	1 : USD 0.275 10 : USD 0.1413 100 : USD 0.0804 1000 : USD 0.0693 3000 : USD 0.0484 6000 : USD 0.044 24000 : USD 0.0429

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