DMP3105LVT 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Low On-Resistance V R (BR)DSS DS(on) max T = 25C A Fast Switching Speed Low Input/Output Leakage 75m V = -10V -3.9A GS Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -30V 105m V = -4.5V -3.3A GS Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: TSOT26 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Power management functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (approximate) Motor Control Top View Ordering Information (Note 3) Part Number Case Packaging DMP3105LVT-7 TSOT26 3,000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.s Green policy can be found on our website at DMP3105LVT Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 12 V GSS Steady T = 25C 3.1 A Continuous Drain Current (Note 4) V = -10V I A GS D State 2.5 T = 70C A Steady T = 25C 2.7 A A Continuous Drain Current (Note 4) V = -4.5V I GS D State 2.2 T = 70C A Steady T = 25C 3.9 A Continuous Drain Current (Note 5) V = -10V I A GS D State 3.1 T = 70C A Steady T = 25C 3.3 A A Continuous Drain Current (Note 5) V = -4.5V I GS D State 2.7 T = 70C A Maximum Continuous Body Diode Forward Current I 2.2 A S Pulsed Drain Current (10us pulse, duty cycle=1%) I 20 A DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 4) 1.15 W P D Thermal Resistance, Junction to Ambient (Note 4) R 108 C/W JA Total Power Dissipation (Note 5) P 1.75 W D Thermal Resistance, Junction to Ambient (Note 5) 72 C/W R JA Thermal Resistance, Junction to Case (Note 5) 23.4 C/W R Jc Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -100 nA I V = -30V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.5 -0.9 -1.5 V V V = V , I = -250A GS(th) DS GS D 65 75 V = -10V, I = -4.2A GS D Static Drain-Source On-Resistance R 75 98 m V = -4.5V, I = -4.0A DS (ON) GS D 98 150 V = -2.5V, I = -3.0A GS D Forward Transfer Admittance Y 5 S V = -15V, I = -4.0A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 839 iss V = -15V, V = 0V DS GS Output Capacitance C 47 pF oss f = 1.0MHz Reverse Transfer Capacitance 43 C rss Gate Resistance 12.3 R V = 0V, V = 0V, f = 1.0MHz G DS GS 9.0 Total Gate Charge (V = -4.5V) Q GS g 19.8 Total Gate Charge (V = -10.0V) Q GS g nC V = -15V, I = -4.0A DS D Gate-Source Charge Q 1.6 gs Gate-Drain Charge Q 1.1 gd Turn-On Delay Time t 9.7 D(on) Turn-On Rise Time t 17.7 r V = -10V, V = -15V, R = 6, GS DD G ns Turn-Off Delay Time t 269 I = -1A D(off) D Turn-Off Fall Time t 64 f Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 November 2011 DMP3105LVT Diodes Incorporated www.diodes.com Document number: DS35504 Rev. 2 - 2 NEW PRODUCT