DMP3125L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Low On-Resistance BV R DSS DS(ON) max T = +25C A Low Input Capacitance -2.5A 95m V = -10V GS Fast Switching Speed -30V 145m V = -4.5V -2.0A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Boost Switch Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Load Switch e3 Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) D S OT23 D G S G S Top View Equivalent Circuit SOT23 Ordering Information (Note 4) Part Number Case Packaging DMP3125L-7 SOT23 3,000/Tape & Reel DMP3125L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3125L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -2.5 A A Continuous Drain Current (Note 6) V = -10V I GS D State -2.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I -1.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -10 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.65 W D Steady Thermal Resistance, Junction to Ambient (Note 5) R 191 C/W JA State Total Power Dissipation (Note 6) P 1.2 W D Steady Thermal Resistance, Junction to Ambient (Note 6) 103 C/W R JA State Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -30V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(TH) DS GS D 76 95 V = -10V, I = -3.8A GS D Static Drain-Source On-Resistance m R DS(ON) 108 145 V = -4.5V, I = -3.0A GS D Diode Forward Voltage V -0.85 -1.2 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C pF iss 254 V = -25V, V = 0V DS GS Output Capacitance pF Coss 14 f = 1.0MHz Reverse Transfer Capacitance pF C 7 rss Gate Resistance 54 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 3.1 nC Q g V = -4.5V, V = -15V GS DS Gate-Source Charge 0.8 nC Q gs I = -3.8A D Gate-Drain Charge Q 1.4 nC gd Turn-On Delay Time t 3.5 ns D(ON) Turn-On Rise Time t 6.3 ns R V = -15V, V = -10V, DS GS R = 6.0, I = -1A Turn-Off Delay Time t ns G D D(OFF) 21.8 Turn-Off Fall Time t ns F 13.1 Reverse Recovery Time ns t 9.6 I = -1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 2.4 nC Q I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3125L November 2017 Diodes Incorporated www.diodes.com Document number: DS40097 Rev. 3 - 2 ADVANCED INFORMATION