DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID BVDSS RDS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 122m VGS = -10V -2.7A Fast Switching Speed -30V Low Input/Output Leakage 190m VGS = -4.5V -2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMP3160LQ is suitable for automotive applications Description requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 This new generation MOSFET is designed to minimize the on-state certified facilities. resistance (RDS(ON)) yet maintain superior switching performance, DMP3160L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C A -2.7 A Drain Current (Note 5) VGS = -10V ID State -2 TA = +70C Pulsed Drain Current (Note 6) IDM -8 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.08 W PD 115 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -800 nA IDSS VDS = -30V, VGS = 0V 80 VGS = 12V, VDS = 0V Gate-Source Leakage IGSS nA 800 V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.3 -1.8 -2.1 V VDS = VGS, ID = -250A V = -10V, I = -2.7A 97 122 GS D Static Drain-Source On-Resistance m RDS(ON) 165 190 V = -4.5V, I = -2.0A GS D Forward Transfer Admittance Y 5.9 S V = -5V, I = -2.7A fs DS D Diode Forward Voltage (Note 7) V -1.26 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 384.4 pF Ciss V = -10V, V = 0V DS GS Output Capacitance 59.4 pF Coss f = 1.0MHz Reverse Transfer Capacitance 52.8 pF Crss VGS = 0V, VDS = 0V, Gate Resistance RG 17.1 f = 1.0MHz Total Gate Charge (V = -4.5V) Q 4.0 nC GS g Total Gate Charge (V = -10V) Q 8.2 nC GS g V = -10V/-4.5V, GS Gate-Source Charge Q 0.9 nC VDS = -15V, ID = -3A gs Gate-Drain Charge Q 1.2 nC gd Turn-On Delay Time 4.8 ns tD(ON) Turn-On Rise Time 7.3 ns tR V = -15V, V = -10V, DS GS R = 6, I = -1A Turn-Off Delay Time 22.5 ns G D tD(OFF) Turn-Off Fall Time tF 13.4 ns Notes: 5. Device mounted on FR-4 PCB. t 10 sec. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3160L September 2020 Diodes Incorporated www.diodes.com Document number: DS31268 Rev. 10 - 2