X-On Electronics has gained recognition as a prominent supplier of DMP3160L-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP3160L-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP3160L-7 Diodes Incorporated

DMP3160L-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMP3160L-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: P-Channel 30 V 2.7A (Ta) 1.08W (Ta) Surface Mount SOT-23-3
Datasheet: DMP3160L-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0801 ea
Line Total: USD 0.8 
Availability - 9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0801
100 : USD 0.064
300 : USD 0.0559
3000 : USD 0.0498
6000 : USD 0.0451
9000 : USD 0.0427

5394
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.451
10 : USD 0.2882
100 : USD 0.1562
1000 : USD 0.1408

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1227
6000 : USD 0.1217
9000 : USD 0.1204
15000 : USD 0.1126
21000 : USD 0.1113

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1208
6000 : USD 0.1196
9000 : USD 0.1184
15000 : USD 0.1106
21000 : USD 0.1094

2748
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 138
Multiples : 1
138 : USD 0.1469
250 : USD 0.1386
500 : USD 0.1303
1000 : USD 0.122

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the DMP3160L-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP3160L-7 and other electronic components in the MOSFETs category and beyond.

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DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID BVDSS RDS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 122m VGS = -10V -2.7A Fast Switching Speed -30V Low Input/Output Leakage 190m VGS = -4.5V -2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMP3160LQ is suitable for automotive applications Description requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 This new generation MOSFET is designed to minimize the on-state certified facilities. resistance (RDS(ON)) yet maintain superior switching performance, DMP3160L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C A -2.7 A Drain Current (Note 5) VGS = -10V ID State -2 TA = +70C Pulsed Drain Current (Note 6) IDM -8 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.08 W PD 115 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -800 nA IDSS VDS = -30V, VGS = 0V 80 VGS = 12V, VDS = 0V Gate-Source Leakage IGSS nA 800 V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.3 -1.8 -2.1 V VDS = VGS, ID = -250A V = -10V, I = -2.7A 97 122 GS D Static Drain-Source On-Resistance m RDS(ON) 165 190 V = -4.5V, I = -2.0A GS D Forward Transfer Admittance Y 5.9 S V = -5V, I = -2.7A fs DS D Diode Forward Voltage (Note 7) V -1.26 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 384.4 pF Ciss V = -10V, V = 0V DS GS Output Capacitance 59.4 pF Coss f = 1.0MHz Reverse Transfer Capacitance 52.8 pF Crss VGS = 0V, VDS = 0V, Gate Resistance RG 17.1 f = 1.0MHz Total Gate Charge (V = -4.5V) Q 4.0 nC GS g Total Gate Charge (V = -10V) Q 8.2 nC GS g V = -10V/-4.5V, GS Gate-Source Charge Q 0.9 nC VDS = -15V, ID = -3A gs Gate-Drain Charge Q 1.2 nC gd Turn-On Delay Time 4.8 ns tD(ON) Turn-On Rise Time 7.3 ns tR V = -15V, V = -10V, DS GS R = 6, I = -1A Turn-Off Delay Time 22.5 ns G D tD(OFF) Turn-Off Fall Time tF 13.4 ns Notes: 5. Device mounted on FR-4 PCB. t 10 sec. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3160L September 2020 Diodes Incorporated www.diodes.com Document number: DS31268 Rev. 10 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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