DMP31D0U 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Max I D Low Gate Threshold Voltage BV Max R DSS DS(ON) T = 25C A Fast Switching Speed 1 V = -4.5V -0.67A GS ESD Protected Gate -30V 1.5 V = -2.5V -0.54A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2 V = -1.8V -0.47A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT23 This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch in Portable Electronics Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) SOT23 D D G G S Gate Protection S Diode Top View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP31D0U-7 SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP31D0U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V VDSS Gate-Source Voltage 8 V V GSS T = +25C (Note 6) -0.67 A Steady Continuous Drain Current T = +85C (Note 6) I -0.48 A A D State -0.53 T = +25C (Note 5) A Pulsed Drain Current (Note 7) I 2.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.45 W Power Dissipation P D (Note 6) 0.71 W (Note 5) 275 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 177 C/W Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 100 Single Pulse 90 Rthja = 176C/W Rthja(t) = Rthja*r(t) T - T = P*Rthja (t) JA 80 70 60 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1,000 T1, PULSE DURATION SECTION (sec) Fig. 1 Single Maximum Power Dissipation 1 r(t) D=0.5 r(t) D=0.9 r(t) D=0.3 0.1 r(t) D=0.7 r(t) D=0.1 r(t) D=0.05 r(t) D=0.01 0.01 r(t) D=0.01 R (t) = r(t)*R r(t) D=0.005 JA JA R = 176C/W JA Duty Cycle, D = t1/t2 r(t) D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Transient Thermal Resistance 2 of 7 April 2016 DMP31D0U www.diodes.com Diodes Incorporated Datasheet number: DS35754 Rev. 2 - 2 P(pk), PEAK TRANSIENT POWER (W) R(t), TRANSIENT THERMAL RESISITANCE