DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 Footprint of just 0.6mm Thirteen Times Smaller than SOT23 Max I D BV Max R 0.4mm Profile Ideal for Low Profile Applications DSS DS(ON) T = +25C A Low Gate Threshold Voltage Fast Switching Speed 1 V = -4.5V -0.76A GS ESD Protected Gate 2KV -30V -0.62A 1.5 VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -0.54A 2 V = -1.8V GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: X2-DFN1006-3 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch in portable electronics Terminals: Finish NiPdAu over Copper Leadframe e4 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.001 grams (Approximate) X2-DFN1006-3 D S G D G Gate Protection S Diode Top View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DMP31D0UFB4-7B P6 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP31D0UFB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 8 V GSS TA = +25C (Note 6) -0.76 Steady Continuous Drain Current -0.55 A T = +85C (Note 6) I A D State -0.54 T = +25C (Note 5) A Pulsed Drain Current (Note 7) I 2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.46 Power Dissipation P W D (Note 6) 0.92 (Note 5) 271 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 136 Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%. 10 9 Single Pulse 8 R = 262 C/W JA R = r * R JA(t) (t) JA 7 T - T = P * R J A JA(t) 6 5 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 R (t) = r(t) * R D = 0.005 JA JA R = 262C/W/W JA Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 2 Transient Thermal Resistance 2 of 7 March 2016 DMP31D0UFB4 www.diodes.com Diodes Incorporated Datasheet number: DS35587 Rev. 2 - 2 r(t), TRANSIENT THERMAL RESISTANCE P , PEAK TRANSIENT POIWER (W) (PK)