DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max D Low On-Resistance V R Max (BR)DSS DS(on) T = +25 C A ESD Protected Gate to 2kV 2.4 V = -10V -300mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 V = -4.5V -250mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: SOT23 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Load Switch leadframe). Portable Applications Weight: 0.006 grams (approximate) Power Management Functions Drain SOT23 D Gate Gate Protection Source S G Diode ESD PROTECTED Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMP32D4S-7 SOT23 3,000/Tape & Reel DMP32D4S-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP32D4S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 300 A Continuous Drain Current (Note 6) V = -10V I mA GS D 250 T = +70C A Pulsed Drain Current (Note 6) I -1 A DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units (Note 5) 370 Total Power Dissipation P mW D (Note 6) 540 (Note 5) 348 Thermal Resistance, Junction to Ambient R JA (Note 6) 241 C/W Thermal Resistance, Junction to Case (Note 6) 91 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -30V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) -1.4 -2.4 V = V , I = -250A DS GS D Gate Threshold Voltage V V GS(th) -1.2 -2.0 V = -5V, I = -1 A DS D 2.4 V = -10V, I = -0.3A GS D Static Drain-Source On-Resistance R DS (ON) 4 V = -4.5V, I = -0.25A GS D Forward Transfer Admittance Y 6 S V = -10V, I = -400mA fs DS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = -300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) 51.16 Input Capacitance C pF iss V = -15V, V = 0V, DS GS 10.85 Output Capacitance C pF oss f = 1.0MHz 8.88 Reverse Transfer Capacitance C pF rss 275 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 0.6 Total Gate Charge Q nC V = -4.5V g GS Total Gate Charge 1.2 nC Q V = -10V, g DS Gate-Source Charge 0.2 nC I = -1A Q V = -10V D gs GS Gate-Drain Charge 0.3 nC Q gd Turn-On Delay Time 9.86 ns t D(on) 11.5 Turn-On Rise Time t ns V = -15V, I = -1A r DS D 31.8 Turn-Off Delay Time t ns V = -10V, R = 6 D(off) GS G 21.9 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 November 2013 DMP32D4S Diodes Incorporated www.diodes.com Document number: DS35822 Rev. 4 - 2 ADVANCE INFORMATION