DMP32D4SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Low On-Resistance D V R Max (BR)DSS DS(on) T = +25 C A Ultra-Small Surfaced Mount Package 2.4 V = -10V -400mA GS ESD Protected Gate -30V 4 V = -4.5V -300mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -50mA 16 V = -2.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: X1-DFN1006-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Load Switch Terminals: Finish NiPdAu over Copper leadframe. Solderable Portable Applications per MIL-STD-202, Method 208 e4 Power Management Functions Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 Gate S D Gate Protection G Source Diode ESD PROTECTED Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Quantity per reel DMP32D4SFB-7B XP 7 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP32D4SFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C -400 A Continuous Drain Current (Note 5) mA V = -10V I GS D -300 T = +70C A T = +25C -500 A Continuous Drain Current (Note 6) V = -10V I mA GS D -400 T = +70C A Pulsed Drain Current (Note 5) I -1 A DM Maximum Body Diode continuous Current -800 mA I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.5 Total Power Dissipation P W D (Note 6) 1.2 (Note 5) 273 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 105 Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 - - V V = 0V, I = -1mA DSS GS D - - -1 A Zero Gate Voltage Drain Current T = +25C I V = -30V, V = 0V J DSS DS GS Gate-Source Leakage - - 10 A I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1.3 - -2.3 V V V = V , I = -250A GS(th) DS GS D 2.4 V = -10V, I = -200mA GS D Static Drain-Source On-Resistance 4 R - - V = -4.5V, I = -200mA DS (ON) GS D 16 V = -2.5V, I = -10mA GS D Forward Transfer Admittance Y - 6 - S V = -10V, I = -400mA fs DS D Diode Forward Voltage V - 0.8 1.2 V V = 0V, I = -300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 51 - Input Capacitance C pF iss V = -15V, V = 0V, DS GS - 11 - Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance C - 9 - pF rss Total Gate Charge - 0.6 - nC Q V = -4.5V g GS Total Gate Charge - 1.3 - nC Q V = -10V, g DS Gate-Source Charge - 0.2 - nC I = -200mA Q V = -10V D gs GS Gate-Drain Charge - 0.2 - nC Q gd - 3.6 - Turn-On Delay Time t ns D(on) - 8.5 - Turn-On Rise Time t ns V = -15V, I = -500mA r DS D - 31.3 - V = -10V, R = 1 Turn-Off Delay Time t ns GS G D(off) - 20.2 - Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 March 2013 DMP32D4SFB Diodes Incorporated www.diodes.com Document number: DS36161 Rev. 2 - 2 ADVANNEW PRODCE INFOUCRMT ATION