DMP32D4SW 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max D Low On-Resistance V R Max (BR)DSS DS(on) T = 25 C A ESD Protected Gate 2.4 V = -10V -250mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 V = -4.5V -200mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: SOT323 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Load Switch leadframe). Portable Applications Weight: 0.006 grams (approximate) Power Management Functions Drain SOT323 D Gate Gate S G Protection Source ESD PROTECTED Diode Top View Top View Equivalent Circuit Pin-out Ordering Information (Note 4) Product Marking Reel size (inches) Quantity per reel DMP32D4SW-7 P32D 7 3,000 DMP32D4SW-13 P32D 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP32D4SW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 250 A Continuous Drain Current (Note 6) mA V = -10V I GS D 200 T = +70C A Pulsed Drain Current (Note 6) I -1 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 300 Total Power Dissipation mW P D (Note 6) 432 (Note 5) 398 Thermal Resistance, Junction to Ambient R JA (Note 6) 290 C/W (Note 5) Thermal Resistance, Junction to Case R 142 JC Operating and Storage Temperature Range T , T -55 to 150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 - - V V = 0V, I = -1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -1 A V = -30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.4 - -2.4 V V = V , I = -250A GS(th) DS GS D 2.4 V = -10V, I = -0.5A GS D Static Drain-Source On-Resistance - - R DS (ON) 4 V = -4.5V, I = -0.3A GS D Forward Transfer Admittance - 6 - S Y V = -10V, I = -400mA fs DS D Diode Forward Voltage - 0.8 1.2 V V V = 0V, I = -300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 51.16 - pF C iss V = -15V, V = 0V, DS GS Output Capacitance - 10.85 - pF C oss f = 1.0MHz - 8.88 - Reverse Transfer Capacitance C pF rss - 275 - Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS - 0.6 - Total Gate Charge Q nC V = -4.5V g GS - 1.2 - Total Gate Charge Q nC g V = -10V, DS - 0.2 - Gate-Source Charge Q nC V = -10V I = -1A gs GS D - 0.3 - Gate-Drain Charge Q nC gd Turn-On Delay Time - 9.86 - ns t D(on) Turn-On Rise Time - 11.5 - ns t V = -15V, I = -1A r DS D Turn-Off Delay Time - 31.8 - ns V = -10V, R = 6 t GS G D(off) Turn-Off Fall Time - 21.9 - ns t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 March 2013 DMP32D4SW Diodes Incorporated www.diodes.com Document number: DS35823 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT