DMP32D5SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max D Low On-Resistance V R Max (BR)DSS DS(ON) T = +25C A Ultra-Small Surfaced Mount Package -400mA 2.4 V = -10V GS -30V ESD Protected Gate 4 V = -4.5V -300mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high-efficiency power management applications. Case: X1-DFN1006-3 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminal Connections: See Diagram Portable Applications Terminals: Finish NiPdAu over Copper Leadframe. Power Management Functions e4 Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) D X1-DFN1006-3 G S D G Gate Protection S Diode ESD PROTECTED Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Reel Size (inches) Quantity per Reel DMP32D5SFB-7B 7 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP32D5SFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -400 A Continuous Drain Current (Note 5) V = -10V I mA GS D -300 TA = +70C T = +25C -500 A Continuous Drain Current (Note 6) mA V = -10V I GS D -400 T = +70C A Pulsed Drain Current (Note 5) I -1 A DM Maximum Body Diode Continuous Current (Note 6) I -800 mA S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.5 Total Power Dissipation P W D (Note 6) 1.2 (Note 5) 255 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 108 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 - - V V = 0V, I = -1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -1 A V = -30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.3 - -2.3 V V = V , I = -250A GS(TH) DS GS D 2.4 VGS = -10V, ID = -200mA Static Drain-Source On-Resistance R - - DS(ON) 4 V = -4.5V, I = -200mA GS D Diode Forward Voltage - 0.8 1.2 V V V = 0V, I = -300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 51 100 pF C iss V = -15V, V = 0V, DS GS Output Capacitance - 11 20 pF C oss f = 1.0MHz Reverse Transfer Capacitance - 9 20 pF C rss - 0.62 2 Total Gate Charge Q nC V = -4.5V g GS - 1.25 4 Total Gate Charge Q nC g V = -10V, DS - 0.16 0.5 Gate-Source Charge Q nC V = -10V I = -200mA gs GS D - 0.21 0.5 Gate-Drain Charge Q nC gd - 4.3 10 Turn-On Delay Time t ns D(ON) - 7.7 15 Turn-On Rise Time ns t V = -15V, I = -500mA R DS D Turn-Off Delay Time - 31.9 60 ns V = -10V, R = 1 t GS G D(OFF) Turn-Off Fall Time - 17.8 40 ns t F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMP32D5SFB November 2015 Diodes Incorporated www.diodes.com Document number: DS38007 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT