DMP32D9UFZ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height I max D BV R max DSS DS(ON) 0.62mm x 0.62mm Package Footprint T = +25C A 5 V = -4.5V Low On-Resistance GS 6 V = -2.5V GS Very Low Gate Threshold Voltage, -1.0V Max -30V -0.2A 7 V = -1.8V GS ESD Protected Gate 10 V = -1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0606-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe. Solderable Analog Switch e4 per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) ESD PROTECTED Top View Bottom View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP32D9UFZ-7B X2-DFN0606-3 10k/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP32D9UFZ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 10 V GSS Steady T = +25C -200 A Continuous Drain Current (Note 5) V = -4.5V I mA GS D State -100 T = +70C A Pulsed Drain Current (Note 6) -700 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) Steady State P 390 mW D Thermal Resistance, Junction to Ambient (Note 5) Steady State 322 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -100 nA V = -24V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.4 -1.0 V V = V , I = -250A GS(TH) DS GS D 5 V = -4.5V, I = -100mA GS D 6 V = -2.5V, I = -50mA GS D Static Drain-Source On-Resistance R 7 V = -1.8V, I = -20mA DS(ON) GS D 10 V = -1.5V, I = -10mA GS D 6 V = -1.2V, I = -1mA GS D Diode Forward Voltage -0.75 -1.0 V V V = 0V, I = -10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 22.5 pF C iss V = -15V, V = 0V, DS GS Output Capacitance C 2.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.1 pF rss Total Gate Charge Q 0.35 nC g VGS = -4.5V, VDS = - 5V, Gate-Source Charge Q 0.06 nC gs I = -200mA D Gate-Drain Charge Q 0.09 nC gd Turn-On Delay Time t 3.1 ns D(ON) Turn-On Rise Time 2.3 ns tR V = -10V, V = -4.5V, DD GS Turn-Off Delay Time 19.9 ns R = 6, I = -200mA t G D D(OFF) Turn-Off Fall Time 10.5 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP32D9UFZ December 2018 Diodes Incorporated www.diodes.com Document number: DS36842 Rev. 3 - 2