DMP4013LFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C A 13m V = -10V -10.3A Density End Products GS -40V -8.8A 18m VGS = -4.5V Occupies 33% of the Board Area Occupied by SO-8, Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: PowerDI 3333-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Reverse Polarity Protection Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMP4013LFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMP4013LFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP4013LFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -10.3 I A D State -8.3 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -13.7 A t<10s A I D -11 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current (Note 7) I -2.6 A S Avalanche Current, L = 0.1mH -34 A I AS Avalanche Energy, L = 0.1mH 58 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1 W D Steady State 123 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 69 Total Power Dissipation (Note 7) P 2.1 W D Steady State 60 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 7) R 3.3 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -40 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -40V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 9.4 13 V = -10V, I = -10A GS D Static Drain-Source On-Resistance R m DS(ON) 12.3 18 V = -4.5V, I = -8A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 3,426 pF iss V = -20V, V = 0V, DS GS Output Capacitance C pF oss 283 f = 1MHz Reverse Transfer Capacitance pF C 235 rss Gate Resistance 4.7 R V = 0V, V = 0V, f = 1MHz g DS GS 32.5 nC Total Gate Charge (V = -4.5V) Q GS g 68.6 nC Total Gate Charge (V = -10V) Q GS g V = -20V, I = -10A DS D Gate-Source Charge 8.2 nC Q gs 9.9 Gate-Drain Charge Q nC gd 5.3 Turn-On Delay Time t ns D(ON) 20 Turn-On Rise Time t ns R V = -20V, V = -10V, DD GEN 126 Turn-Off Delay Time t ns R = 3, I = -10A D(OFF) G D 83 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time 19.5 ns tRR I = -10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 9.8 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP4013LFGQ March 2018 Diodes Incorporated www.diodes.com Document number: DS38779 Rev. 2 - 2 ADVANCE INFORMATION