DMP4015SPS Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test In Production I D Low On-Resistance V R (BR)DSS DS(on) max Fast Switching Speed T = +25C A Lead-Free Finish RoHS Compliant (Notes 1 & 2) 11m V = -10V -17.0A GS Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to AEC-Q101 Standards for High Reliability 15m V = -4.5V -14.5A GS Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: POWERDI 5060-8 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish 100% matte Tin annealed over Copper Applications leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (approximate) Power management functions Analog Switch D S D Pin1 S D S D G G D S Top View Internal Schematic Pin Configuration Bottom View Top View Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI 5060-8 2,500 / Tape & Reel DMP4015SPSQ-13 Automotive POWERDI 5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP4015SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -8.5 A I A D State -6.8 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -13.0 A t<10s A I D -10.5 T = +70C A Steady T = +25C -11.0 A I A D State -8.7 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -17.0 A t<10s A I D -13.5 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I -100 A DM Maximum Body Diode Continuous Current (Note 7) I -3.5 A S Avalanche Current (Note 8) I -22 A AS Avalanche Energy (Note 8) E 242 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady state 96.4 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40.6 C/W 2.1 T = +25C A Total Power Dissipation (Note 7) P W D 1.4 T = +70C A Steady state 55.0 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 24.0 C/W Thermal Resistance, Junction to Case (Note 7) 4.15 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D A Zero Gate Voltage Drain Current I -1 V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.5 -2.0 -2.5 V V = V , I = -250A GS(th) DS GS D 7 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance R m DS (ON) 9 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance 26 S Y V = -20V, I = -9.8A fs DS D Diode Forward Voltage -0.7 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 4234 C iss V = -20V, V = 0V DS GS Output Capacitance C 1036 pF oss f = 1.0MHz Reverse Transfer Capacitance C 526 rss Gate Resistance R 7.77 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge Q 47.5 g V = -20V, V = -5V DS GS Gate-Source Charge Q 14.2 nC gs I = -9.8A D Gate-Drain Charge Q 13.5 gd Turn-On Delay Time 13.2 t D(on) Turn-On Rise Time 10.0 t V = -10V, V = -20V, R = 6 , r GS DD G ns Turn-Off Delay Time 302.7 I = -1A, R = 20 t D L D(off) Turn-Off Fall Time 137.9 t f Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 8. UIS in production with L = 0.1mH, TJ = +25C 9 .Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 November 2013 DMP4015SPS Diodes Incorporated www.diodes.com Document number: DS35518 Rev. 9 - 2 NEW PRODUCT