DMP4015SSSQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R Max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11m V = -10V -10.1A GS Halogen and Antimony Free. Green Device (Note 3) -40V Qualified to AEC-Q101 Standards for High Reliability -8.8A 15m V = -4.5V GS PPAP Capable (Note 4) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SO-8 resistance (R ), yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) Analog Switch D SO-8 S D e3 e3 S D G S D G D S Top View Equivalent Circuit Top View Internal Schematic Ordering Information (Note 5) Part Number Qualification Case Packaging DMP4015SSSQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP4015SSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -9.1 A A Continuous Drain Current (Note 6) V = -10V I GS D State -7.2 T = +70C A Steady T = +25C -7.8 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -6.2 T = +70C A Steady T = +25C -10.1 A Continuous Drain Current (Note 7) V = -10V I A GS D State -8 T = +70C A Steady T = +25C -8.8 A A Continuous Drain Current (Note 7) V = -4.5V I GS D State -7 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Avalanche Current (Note 8) I -22 A AS Avalanche Energy (Note 8) E 242 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.45 W D Thermal Resistance, Junction to Ambient (Note 6) R 88 C/W JA Total Power Dissipation (Note 7) P 1.82 W D Thermal Resistance, Junction to Ambient (Note 7) 70 C/W RJA Thermal Resistance, Junction to Case (Note 7) 7.6 C/W R Jc Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -40 V BVDSS VGS = 0V, ID = -250A Zero Gate Voltage Drain Current -1 A I V = -40V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.5 -2 -2.5 V V V = V , I = -250A GS(th) DS GS D 7 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance m RDS(ON) 9 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance Y 26 S V = -20V, I = -9.8A fs DS D Diode Forward Voltage (Note 6) V -0.7 -1 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 4,234 iss V = -20V, V = 0V DS GS Output Capacitance C 1,036 pF oss f = 1MHz Reverse Transfer Capacitance C 526 rss Gate Resistance 7.77 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 47.5 Q g V = -20V, V = -5V DS GS Gate-Source Charge 14.2 nC Q gs I = -9.8A D Gate-Drain Charge 13.5 Q gd Turn-On Delay Time 13.2 t D(on) Turn-On Rise Time t 10 V = -10V, V = -20V, R = 6, r GS DD G nS Turn-Off Delay Time t 302.7 I = -1A, R = 20 D(off) D L Turn-Off Fall Time t 137.9 f Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 8 .UIS in production with L = 1mH, T = +25C J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. 2 of 7 DMP4015SSSQ November 2015 Diodes Incorporated www.diodes.com Document number: DS36682 Rev. 4 - 2 NEW PRODUCT