NOT RECOMMENDED FOR NEW DESIGN USE DMPH4029LFGQ DMP4025SFGQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features ID Max Low R Minimizes Conduction Losses DS(ON) BV R Max DSS DS(ON) T = +25C A Fast Switching Speed Minimizes Switching Losses (Note 7) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 25m V = -10V - 7.2A GS -40V Halogen and Antimony Free. Green Device (Note 3) - 5.4A 45m VGS = -4.5V Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for Case: PowerDI 3333-8 high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Motor Control Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.0172 grams (Approximate) Printer Equipment PowerDI3333-8 Top View Bottom View Device Symbol Ordering Information (Note 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DMP4025SFGQ-7 P40 7 8 2,000 DMP4025SFGQ-13 P40 13 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMPH4029LFGQ DMP4025SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -40 V DSS V Gate-Source Voltage V 20 GSS (Note 7) -7.2 Continuous Drain Current, V = -10V GS -5.77 T = +70C (Note 7) I A D (Note 6) -4.65 A Maximum Body Diode Forward Current (Note 7) I -7.2 S Pulsed Drain Current (Note 8) I -80 DM Pulsed Source Current (Note 8) I -80 SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 0.81 Power Dissipation W P D Linear Derating Factor (Note 7) 1.95 (Note 6) 155 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 64 Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. For a device surface mounted on 25mm x 25mm FR-4 PCB with 2oz copper, in still air conditions. 8. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300s. 2 of 8 DMP4025SFGQ December 2018 Diodes Incorporated www.diodes.com Document Number: DS36897 Rev: 3 - 3 ADVANCE INFORMATION