DMP4047SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production I D V R (BR)DSS DS(on) Low on-resistance T = +25C A Fast switching speed 45m V = -10V -6.5A GS -40V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 55m V = -4.5V -5.9A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data ) and yet maintain superior switching performance, making it (R DS(ON) ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions e3 Weight: 0.074 grams (approximate) D1 D2 SO-8 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Equivalent Circuit Top View Pin-Out Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMP4047SSD-13 Standard SO-8 2,500/Tape & Reel DMP4047SSDQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP4047SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -5.1 A I A D State -4.1 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -6.5 A t < 10s A I D -5.2 T = +70C A Steady T = +25C -4.6 A I A D State -3.7 T = +70C A Continuous Drain Current (Note 7) V = -4.5V GS T = +25C -5.9 A t < 10s A I D -4.7 T = +70C A Maximum Body Diode Continuous Current I -2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -40 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.8 T = +70C A Steady state 98 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t < 10s 59 1.8 T = +25C A Total Power Dissipation (Note 7) P W D 1.1 T = +70C A Steady state 71 Thermal Resistance, Junction to Ambient (Note 7) R JA t < 10s 43 C/W Thermal Resistance, Junction to Case (Note 7) 11.8 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -40V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(th) DS GS D 33 45 V = -10V, I = -4.4A GS D Static Drain-Source On-Resistance R m DS (ON) 40 55 V = -4.5V, I = -3.7A GS D Diode Forward Voltage -0.75 -1.2 V V V = 0V, I = -3.9A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 1154 pF V = -20V, V = 0V, DS GS Output Capacitance Coss 84 pF f = 1.0MHz Reverse Transfer Capacitance Crss 66 pF Gate Resistance RG 12.6 V = 0V, V = 0V, f = 1MHz DS GS Qg 10.6 nC Total Gate Charge (V = -4.5V) GS Qg 21.5 nC Total Gate Charge (V = -10V) GS V = -20V, I = -4.9A DS D Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd 3.3 nC Turn-On Delay Time tD(on) 8.7 ns Turn-On Rise Time tr 19.6 ns V = -20V, I = -3.9A DS D Turn-Off Delay Time tD(off) 34.9 ns V = 4.5V, R = 1 GS G Turn-Off Fall Time tf 25.5 ns Body Diode Reverse Recovery Time trr 9.61 ns I = -3.9A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Qrr 3.3 nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 5 September 2013 DMP4047SSD Diodes Incorporated www.diodes.com Document Number DS36353 Rev. 3 - 2 NEW PRODNEW PRODUCUCT T