A Product Line of Diodes Incorporated DMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D V R Max (BR)DSS DS(on) T = +25C A Fast Switching Speed 50m V = -10V -5.2A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 79m V = -4.5V -4.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See diagram below Backlighting Terminals: Finish - Matte Tin annealed over Copper lead frame. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (approximate) D1 D2 SO-8 S1 D1 D1 G1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP4050SSD-13 Standard SO-8 2500 / Tape & Reel DMP4050SSDQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated DMP4050SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -40 V V DSS Gate-Source Voltage (Note 5) V V 20 GS (Notes 9 & 11) -5.2 Continuous Drain Current -4.2 A V = 10V T = +70C (Notes 7 & 9) I GS A D (Notes 6 & 9) -4.0 Pulsed Drain Current (Notes 8 & 9) -20.0 A V = 10V I GS DM Continuous Source Current (Body Diode) (Notes 7 & 9) -3.2 A I S Pulsed Source Current (Body Diode) (Notes 8 & 9) I -20.0 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.25 (Notes 6 & 9) 10.0 Power dissipation 1.8 W (Notes 6 & 10) P D Linear derating factor 14.3 mW/C 2.14 (Notes 7 & 9) 17.2 100 (Notes 6 & 9) Thermal Resistance, Junction to Ambient (Notes 6 & 10) 70 R JA C/W (Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) 53 R JL Operating and storage temperature range T , T -55 to +150 C J STG Notes: 5. AEC-Q101 V maximum is 16V. GS 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note (3), except the device is measured at t 10 sec. 8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 April 2013 DMP4050SSD Diodes Incorporated www.diodes.com Document Number DS32107 Rev 3 - 2 ADVANCE INFORMATION