DMP510DL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Low On-Resistance V R DSS DS(ON) max T = +25C A Low Gate Threshold Voltage -50V -180mA 10 V = -5V GS Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high-efficiency power management applications. Mechanical Data Applications General Purpose Interfacing Switch Case: SOT23 Power Management Functions Case Material: UL Flammability Classification Rating 94V-0 Analog Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish (Lead Free Plating). e3 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G G S S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMP510DL-7 SOT23 3,000/Tape & Reel DMP510DL-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP510DL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -50 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C -180 A Continuous Drain Current (Note 6) V = -5V I mA GS D State -130 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -0.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -1.2 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 310 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 405 C/W R JA Total Power Dissipation (Note 6) 500 mW P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 251 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -50 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -50V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.8 -2.0 V V V = V , I = -1mA GS(TH) DS GS D Static Drain-Source On-Resistance 10 R V = -5V, I = -0.1A DS (ON) GS D Forward Transconductance g 0.25 S V = -25V, I = -0.1A FS DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 24.6 pF iss Output Capacitance C 4.8 pF V = -25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 2.8 pF rss Turn-On Delay Time t 2.8 ns D(ON) Turn-On Rise Time t 2.6 ns R V = -30V, I = -0.27A, DD D Turn-Off Delay Time 11.1 ns R = 50, V = -10V t GEN GS D(OFF) Turn-Off Fall Time 7.2 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP510DL September 2015 Diodes Incorporated www.diodes.com Document number: DS38183 Rev. 1 - 2