Green DMP56D0UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D ESD Protected Gate V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance -160mA 6 V = -4 V GS Fast Switching Speed -50V -120mA 8 V = -2.5V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptions Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the Mechanical Data on-state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Case: SOT563 applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper DC-DC Converters e3 leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.006 grams (approximate) Battery Operated Systems and Solid-State Relays SOT563 D G S 2 1 1 G S D 2 2 1 ESD PROTECTED TOP VIEW TOP VIEW Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP56D0UV -7 SOT563 3000/Tape & Reel DMP56D0UV -13 SOT563 10000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP56D0UV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -50 V V DSS Gate-Source Voltage Continuous V V 8 GSS Drain Current (Note 5) Continuous -160 mA I D Pulsed Drain Current (10s pulse, duty cycle = 1%) I -700 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 400 mW P D Thermal Resistance, Junction to Ambient (Note 5) 313 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -50 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -10 A V = -50V, V = 0V DSS DS GS Gate-Body Leakage 1 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.5 -1.2 V V V = V , I = -250A GS(th) DS GS D 4.6 6 V = -4V, I = -100mA GS D Static Drain-Source On-Resistance R DS (ON) 6.0 8 V = -2.5V, I = -80mA GS D Forward Transfer Admittance Y 100 mS V = -5V, I = -100mA fs DS D Diode Forward Voltage V -1.2 V V = 0V, I = -100mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 50.54 pF iss Output Capacitance C 3.49 pF V = -25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 2.42 pF rss Gate Resistance 201 R V = 0V, V = 0V, f = 1.0MHz G DS GS 0.58 nC Total Gate Charge V = 4.5V Q GS g V = -4V, V = -25V, GS DS Gate-Source Charge 0.09 nC Q gs I = -100mA D Gate-Drain Charge Q 0.14 nC gd Turn-On Delay Time t 4.46 nS D(on) Turn-On Rise Time t 6.63 nS V = -30V, I = -0.27A, V = -4V r DD D GEN , Turn-Off Delay Time t 21.9 nS R = 6 D(off) GEN Turn-Off Fall Time t 15.0 nS f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 5 June 2013 DMP56D0UV Diodes Incorporated www.diodes.com Document number: DS36174 Rev. 2 - 2