DMP58D0LFB Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance V R Package (BR)DSS DS(ON) T = +25C A Low Input Capacitance -50V X1-DFN1006-3 -310mA 8 V = -5V GS Fast Switching Speed Low Input/Output Leakage ESD Protected 1kV Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation MOSFET is designed to minimize the on-state Halogen and Antimony Free. Green Device (Note 3) resistance (R ) and yet maintain superior switching performance, DS(on) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high efficiency power management applications. Mechanical Data Applications Case: X1-DFN1006-3 DC-DC Converters Case Material: Molded Plastic,Gree Molding Compound Power Management Functions UL Flammability Classification Rating 94V-0 Battery Operated Systems and Solid-State Relays Moisture Sensitivity: Level 1 per J-STD-020 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.001 grams (Approximate) Memories, Transistors, etc. Drain X1-DFN1006-3 S Gate D G Gate Protection Source Diode ESD PROTECTED Top View Bottom View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP58D0LFB-7 X1-DFN1006-3 3,000 / Tape & Reel DMP58D0LFB-7B X1-DFN1006-3 10,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See NZ NZ NZ DMP58D0LFB Marking Information From date code 1527 (YYWW), NZ NZ this changes to: Top View Top View Dot Denotes Drain Side Bar Denotes Gate and Source Side DMP58D0LFB-7 NZ Top View NZ = Part Marking Code Bar Denotes Gate and Source Side DMP58D0LFB-7B Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -50 V VDSS Gate-Source Voltage 20 V V GSS Steady T = +25C -180 A mA Continuous Drain Current (Note 5) V = -5V I GS D State -150 T = +70C A Steady T = +25C -310 A Continuous Drain Current (Note 5) V = -5V I mA GS D State -250 TA = +70C Pulsed Drain Current (Note 7) -500 mA I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) 0.47 W P D 258 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Power Dissipation (Note 6) P 1.22 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 105 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 of 7 DMP58D0LFB June 2015 Diodes Incorporated www.diodes.com Document number: DS35206 Rev. 8 - 2 NZ NZ NZ NZ NZ NZ