DMP6023LFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized I max D V R max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher A -7.7A 25m V = -10V density end products GS -60V -6.8A 33m V = -4.5V GS Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: POWERDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI3333-8 D Pin 1 S S S G G D D D D S Equivalent Circuit Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging DMP6023LFG-7 2,000/Tape & Reel POWERDI3333-8 DMP6023LFG-13 3,000/Tape & Reel POWERDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6023LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -7.7 A I D State -6.2 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -10.3 A t<10s I A D -8.2 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -55 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.2 A S Avalanche Current, L = 0.1mH -35.5 A I AS Avalanche Energy, L = 0.1mH 62.9 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.0 W D Steady State 123 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 69 Total Power Dissipation (Note 6) P 2.1 W D Steady State 60 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 6) 6.3 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(th) DS GS D 25 V = -10V, I = -5A GS D Static Drain-Source On-Resistance m R DS (ON) 33 VGS = -4.5V, ID = -4A Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 2569 iss V = -30V, V = 0V, DS GS Output Capacitance pF C 179 oss f = 1MHz Reverse Transfer Capacitance pF C 143 rss Gate Resistance 8 R V = 0V, V = 0V, f = 1MHz g DS GS 26.5 Total Gate Charge (V = -4.5V,) Q nC GS g 53.1 Total Gate Charge (V = -10V), Q nC GS g V = -30V, I = -5A DS D 7.1 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6 Turn-On Delay Time ns tD(on) 7.1 Turn-On Rise Time ns t V = -10V, V = -30V, r GS DS Turn-Off Delay Time 110 ns R = 3, I = -5A t G D D(off) Turn-Off Fall Time 62 ns t f Body Diode Reverse Recovery Time 20 ns t rr I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 14 nC Q rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 DMP6023LFG January 2015 Diodes Incorporated www.diodes.com Document number: DS37204 Rev. 2 - 2 ADVANCE INFORMATION