DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D V R max (BR)DSS DS(ON) T = +25C A Fast Switching Speed Low Threshold 25m V = -10V GS -6.6A Low Gate Drive -60V 33m V = -4.5V -5.8A GS Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Below Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D S D S D G G D S Top View TOP VIEW Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP6023LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6023LSS Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS T = +25C A -6.6 A Continuous Drain Current (Note 6) V = -10V I GS D -5.3 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) -50 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -1.8 A I S Avalanche Current, L = 0.1mH I -35.5 A AS Avalanche Energy, L = 0.1mH E 62.9 mJ AS Thermal Characteristics ( TA = +25C unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.2 W D Thermal Resistance, Junction to Ambient (Note 5) 100 C/W R JA Total Power Dissipation (Note 6) P 1.6 W D Thermal Resistance, Junction to Ambient (Note 6) 75 R JA C/W Thermal Resistance, Junction to Case (Note 6) 12 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1 -3 V V V = V , I = -250A GS(th) DS GS D 25 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS (ON) 33 V = -4.5V, I = -4A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2569 pF iss V = -30V, V = 0V, DS GS Output Capacitance C 179 pF oss f = 1MHz Reverse Transfer Capacitance C 143 pF rss 8 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 26.5 nC Total Gate Charge (VGS = -4.5V,) Qg 53.1 nC Total Gate Charge (V = -10V), Q GS g V = -30V, I = -5A DS D Gate-Source Charge 7.1 nC Q gs Gate-Drain Charge 12.6 nC Q gd Turn-On Delay Time 6 ns t D(on) 7.1 Turn-On Rise Time t ns V = -10V, V = -30V, r GS DS 110 Turn-Off Delay Time t ns R = 3, I = -5A D(off) G D 62 Turn-Off Fall Time t ns f Body Diode Reverse Recovery Time t 20 nS rr I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 14 nC rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP6023LSS January 2015 Diodes Incorporated www.diodes.com Document number: DS37198 Rev. 2 - 2 ADVANCE INFORMATION