DMP6050SFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R Ensures On State Losses Are Minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C A Density End Products 50m V = -10V -4.8A GS Occupies Just 33% of The Board Area Occupied by SO-8 -60V Enabling Smaller End Product 70m V = -4.5V -4.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: POWERDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP6050SFG-7 2000/Tape & Reel POWERDI 3333-8 DMP6050SFG-13 3000/Tape & Reel POWERDI 3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6050SFG Maximum Ratings T = +25C, unless otherwise specified. A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A -4.8 A I D State -3.9 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -6.0 A t<10s I A D -4.8 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -32 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.8 A S Avalanche Current (Note 7) L = 0.1mH -24.8 A I AS Repetitive Avalanche Energy (Note 7) L = 0.1mH 30.8 mJ E AS Thermal Characteristics T = +25C, unless otherwise specified. A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.1 W P D Steady state 118 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 78 Total Power Dissipation (Note 6) 1.8 W P D Steady state 71 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 46 C/W Thermal Resistance, Junction to Case (Note 6) R 6.7 JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics T = +25C, unless otherwise specified. A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(TH) DS GS D 36 50 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS (ON) 47 70 V = -4.5V, I = -4A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance pF C 1293 iss V = -30V, V = 0V, DS GS Output Capacitance pF C 86.3 oss f = 1.0MHz Reverse Transfer Capacitance C 64.7 pF rss 12 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 11.9 Total Gate Charge (V = -4.5V) Q nC GS g 24 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -5A DS D 3.6 Gate-Source Charge Q nC gs Gate-Drain Charge 5.7 nC Q gd Turn-On Delay Time 4.3 ns t D(ON) Turn-On Rise Time 6.3 ns t V = -10V, V = -30V, R GS DS Turn-Off Delay Time 46.7 ns R = 3, I = -5A t G D D(OFF) 25.3 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time t 13.6 ns I = -5A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 7.4 nC I = -5A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 DMP6050SFG October 2014 Diodes Incorporated www.diodes.com Document number: DS37378 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT