Green DMP6050SPS 60V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications I D BV R DSS DS(ON) T = +25C High Conversion Efficiency C Low R Minimizes On State Losses 50m V = -10V -26A DS(ON) GS -60V Low Input Capacitance -22A 70m VGS = -4.5V Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This new generation 60V P-Channel Enhancement Mode MOSFET is designed to minimize R and yet maintain superior switching DS(ON) Mechanical Data performance. This device is ideal for use in Notebook battery power Case: PowerDI 5060-8 management and loadswitch. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Notebook Battery Power Management Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe Loadswitch Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 S D Pin1 S D D S G D G S Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP6050SPS-13 PowerDI5060-8 2500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP6050SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -5.7 A A Continuous Drain Current (Note 6) V = -10V I GS D State -4.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -45 A I DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.4 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I -45 A SM Avalanche Current (Note 8) L = 0.1mH I -25 A AS Repetitive Avalanche Energy (Note 8) L = 0.1mH E 32 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.3 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 95 C/W A JA Power Dissipation (Note 6) P 2.4 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 52 C/W A JA 2.4 C/W Thermal Resistance, Junction to Case T = +25C (Note 7) R C JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 43 50 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 53 70 V = -4.5V, I = -4A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C pF iss 2163 V = -30V, V = 0V, DS GS Output Capacitance pF C 88 oss f = 1.0MHz Reverse Transfer Capacitance pF C 58 rss Gate Resistance 13 R V = 0V, V = 0V, f = 1MHz g DS GS 30 nC Total Gate Charge (V = -10V) Q GS g 14 nC Total Gate Charge (V = -4.5V) Q GS g V = -30V, I = -5A DS D 5 Gate-Source Charge Q nC gs 4.6 Gate-Drain Charge Q nC gd 4.7 Turn-On Delay Time t ns D(ON) 2.7 Turn-On Rise Time t ns R V = -10V, V = -30V, GS DS 73 Turn-Off Delay Time ns R = 3, I = -5A t G D D(OFF) 25 Turn-Off Fall Time ns t F Body Diode Reverse Recovery Time 18 ns t I = -5A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 12 nC Q I = -5A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6050SPS January 2018 Diodes Incorporated www.diodes.com Document number: DS40042 Rev. 3 - 2