X-On Electronics has gained recognition as a prominent supplier of DMP6050SPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP6050SPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP6050SPS-13 Diodes Incorporated

DMP6050SPS-13 electronic component of Diodes Incorporated
DMP6050SPS-13 Diodes Incorporated
DMP6050SPS-13 MOSFETs
DMP6050SPS-13  Semiconductors

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See Product Specifications
Part No. DMP6050SPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMP6050SPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0038 ea
Line Total: USD 1 
Availability - 3025
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3025
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0038
10 : USD 0.6737
100 : USD 0.4059
250 : USD 0.3894
500 : USD 0.3278
1000 : USD 0.2893
2500 : USD 0.2849
5000 : USD 0.2629

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMP6050SPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP6050SPS-13 and other electronic components in the MOSFETs category and beyond.

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Green DMP6050SPS 60V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications I D BV R DSS DS(ON) T = +25C High Conversion Efficiency C Low R Minimizes On State Losses 50m V = -10V -26A DS(ON) GS -60V Low Input Capacitance -22A 70m VGS = -4.5V Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This new generation 60V P-Channel Enhancement Mode MOSFET is designed to minimize R and yet maintain superior switching DS(ON) Mechanical Data performance. This device is ideal for use in Notebook battery power Case: PowerDI 5060-8 management and loadswitch. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Notebook Battery Power Management Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe Loadswitch Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 S D Pin1 S D D S G D G S Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP6050SPS-13 PowerDI5060-8 2500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP6050SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -5.7 A A Continuous Drain Current (Note 6) V = -10V I GS D State -4.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -45 A I DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.4 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I -45 A SM Avalanche Current (Note 8) L = 0.1mH I -25 A AS Repetitive Avalanche Energy (Note 8) L = 0.1mH E 32 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.3 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 95 C/W A JA Power Dissipation (Note 6) P 2.4 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 52 C/W A JA 2.4 C/W Thermal Resistance, Junction to Case T = +25C (Note 7) R C JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 43 50 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 53 70 V = -4.5V, I = -4A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C pF iss 2163 V = -30V, V = 0V, DS GS Output Capacitance pF C 88 oss f = 1.0MHz Reverse Transfer Capacitance pF C 58 rss Gate Resistance 13 R V = 0V, V = 0V, f = 1MHz g DS GS 30 nC Total Gate Charge (V = -10V) Q GS g 14 nC Total Gate Charge (V = -4.5V) Q GS g V = -30V, I = -5A DS D 5 Gate-Source Charge Q nC gs 4.6 Gate-Drain Charge Q nC gd 4.7 Turn-On Delay Time t ns D(ON) 2.7 Turn-On Rise Time t ns R V = -10V, V = -30V, GS DS 73 Turn-Off Delay Time ns R = 3, I = -5A t G D D(OFF) 25 Turn-Off Fall Time ns t F Body Diode Reverse Recovery Time 18 ns t I = -5A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 12 nC Q I = -5A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6050SPS January 2018 Diodes Incorporated www.diodes.com Document number: DS40042 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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