DMP6050SSD 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R (BR)DSS DS(on) max T = +25C C Low Input Capacitance -11.3A 55m V = -10V GS Fast Switching Speed -60V -9.1A 70m V = -4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(on) Case: SO-8 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.076 grams (Approximate) SO-8 D1 D2 SO-8 S1 D1 Pin1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP6050SSD-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6050SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C -11.3 C I A D -9.1 T = +70C C Continuous Drain Current (Note 6) V = -10V GS T = +25C -4.8 A I A D -3.9 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) -32 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -2.8 A I S Avalanche Current (Note 7) L = 0.1mH -24.8 A I AS Avalanche Energy (Note 7) L = 0.1mH E 30.8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.2 A Total Power Dissipation (Note 5) P W D T = +70C 0.9 A Steady state 104 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 45 T = +25C 1.7 A Total Power Dissipation (Note 6) P W D T = +70C 1.1 A Steady state 72 Thermal Resistance, Junction to Ambient (Note 6) RJA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 6) R 13 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(th) DS GS D 36 55 V = -10V, I = -5A - GS D Static Drain-Source On-Resistance m R DS (ON) - 47 70 V = -4.5V, I = -4A GS D Diode Forward Voltage V - -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C - 1293 - pF iss V = -30V, V = 0V, DS GS Output Capacitance C - - pF oss 86.3 f = 1.0MHz Reverse Transfer Capacitance - - pF Crss 64.7 Gate Resistance - 12 - R V = 0V, V = 0V, f = 1MHz g DS GS - 11.9 - nC Total Gate Charge (V = -4.5V) Q GS g - 24 - nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D Gate-Source Charge - 3.6 - nC Q gs 5.7 Gate-Drain Charge Q - - nC gd 4.3 Turn-On Delay Time t - - ns D(on) 6.3 Turn-On Rise Time t - - ns r V = -10V, V = -30V, GS DS 46.7 Turn-Off Delay Time t - - ns R = 3, I = -5A D(off) G D 25.3 Turn-Off Fall Time - - ns tf Body Diode Reverse Recovery Time 13.6 ns t I = -5A, di/dt = 100A/s rr F Body Diode Reverse Recovery Charge 7.4 nC Q I = -5A, di/dt = 100A/s rr F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMP6050SSD October 2014 Diodes Incorporated www.diodes.com Document number: DS37454 Rev.1 - 2 NEW PRODUCT NEW PRODUCT