DMP6110SSDQ-13 Diodes Incorporated

DMP6110SSDQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance BV R Max DSS DS(ON) T = +25C A Low Input Capacitance 105m V = -10V -3.3A GS Fast Switching Speed -60V 130m V = -4.5V -3.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SO-8 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Engine Management Systems Moisture Sensitivity: Level 1 per J-STD-020 Body Control Electronics Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 D1 D2 S1 D1 Pin1 G1 D1 S2 G1 G2 D2 G2 D2 S1 S2 Top View Equivalent Circuit Top View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMP6110SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6110SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS T = +25C C -7.8 A I D -6.3 T = +70C C Continuous Drain Current (Note 7) V = -10V GS T = +25C -3.3 A I A D -2.7 T = +70C A Pulsed Drain Current (380s Pulse, 1% Duty Cycle) I -24 A DM Maximum Continuous Body Diode Forward Current (Note 7) I -1.8 A S Avalanche Current (Note 10) L = 0.1mH -19 A I AS Avalanche Energy (Note 10) L = 0.1mH 18 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.2 A Total Power Dissipation (Notes 6 & 8) 0.9 W T = +70C P A D Total Power Dissipation (Notes 6 & 9) 1.2 T = +25C A Steady State 104 Thermal Resistance, Junction to Ambient (Notes 6 & 8) t<10s 45 C/W R JA Thermal Resistance, Junction to Ambient (Notes 6 & 9) Steady State 100 1.7 T = +25C A Total Power Dissipation (Notes 7 & 8) 1.1 W T = +70C P A D Total Power Dissipation (Notes 7 & 9) 1.8 T = +25C A Steady State 74 Thermal Resistance, Junction to Ambient (Notes 7 & 8) t<10s 37 R JA C/W Thermal Resistance, Junction to Ambient (Notes 7 & 9) Steady State 71 Thermal Resistance, Junction to Case (Notes 7 & 8) 15 R JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 8 DMP6110SSDQ September 2016 Diodes Incorporated www.diodes.com Document number: DS38170 Rev. 1 - 2 NEW PRODUCT