DMP6250SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low gate drive I D V R (BR)DSS DS(on) T = +25C Low input capacitance A Fast switching speed -2.1A 250m V = -10V GS -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -1.9A 300m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for Case: SOT223 high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See diagram below DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Power Management Functions e3 Solderable per MIL-STD-202, Method 208 Uninterrupted Power Supply Weight: 0.112 grams (approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP6250SE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6250SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage V -60 V DSS Gate-Source voltage (Note 5) V 20 V GS T = +25C A -2.1 I A D T = +70C A -1.7 Continuous Drain current (Note 6) V = -10V GS T = +25C C -6.1 A I D T = +70C C -4.9 Maximum Body Diode Continuous Current -1.8 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -11 A DM Single Pulsed Avalanche Current (Note 7) L = 0.1mH I -12 A AS Single Pulsed Avalanche Energy (Note 7) L = 0.1mH E 8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.8 A Total Power Dissipation (Note 6) P W D T = +70C 1.1 A Thermal Resistance, Junction to Ambient (Note 6) R 69 C/W JA 14 Total Power Dissipation (Note 6) T = +25C P W C D Thermal Resistance, Junction to Case (Note 6) R 8.7 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1 A V = -60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(th) DS GS D 250 V = -10V, I = -1.0A GS D Static Drain-Source On-Resistance R m DS (ON) 300 V = -4.5V, I = -0.5A GS D Diode Forward Voltage -1.2 V V V = 0V, I = -2.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 551 pF C iss V = -30V, V = 0V DS GS Output Capacitance 25.7 pF C oss f= 1MHz Reverse Transfer Capacitance 19.1 C pF rss 12.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 4.8 Total Gate Charge (VGS = -4.5V) Q nC g 9.7 Total Gate Charge (VGS = -10V) Q nC g V = -30V, I = -2A DS D 1.5 Gate-Source Charge Q nC gs 1.6 Gate-Drain Charge Q nC gd Turn-On Delay Time 6.3 ns t D(on) Turn-On Rise Time 10.3 ns t V = -30V, V = -10V, r DS GS Turn-Off Delay Time 91.4 ns R = 50 , I = -1A t G D D(off) Turn-Off Fall Time 39.8 ns t f Reverse recovery time t 9.2 ns rr I = -1A, di/dt= 100A/s S Reverse recovery charge Q 3.9 nC rr Notes: 5. AEC-Q101 V maximum is 16V. GS 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep T = 25C J 8. Short duration pulse test used to minimize self-heating effect. 9. For design aid only, not subject to production testing. 2 of 6 January 2014 DMP6250SE Diodes Incorporated www.diodes.com Document Number DS36696 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT