DMP6350SQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 350m V = -10V -1.5A GS Low Input/Output Leakage -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 550m V = -4.5V -1.2A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT23 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.009 grams (Approximate) D D G G S S Top View Internal Schematic Top View Ordering Information (Note 5) Part Number Case Packaging DMP6350SQ-7 SOT23 3000/Tape & Reel DMP6350SQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP6350SQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -1.5 A Continuous Drain Current (Note 7), V = -10V I A GS D State -1.2 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -6 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 0.72 W P D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 176 C/W A JA Power Dissipation (Note 7) P 1.17 W D 108 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 7) R A JA Thermal Resistance, Junction to Case 34 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1.0 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -1.8 -3.0 V V = V , I = -250A GS(TH) DS GS D V = -10V, I = -0.9A 257 350 GS D Static Drain-Source On-Resistance m R DS(ON) 343 550 V = -4.5V, I = -0.8A GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 206 pF C iss V = -30V, V = 0V, DS GS Output Capacitance 15 pF C oss f = 1.0MHz Reverse Transfer Capacitance 11 pF C rss Gate Resistance 17 R V = 0V, V = 0V, f = 1MHz g DS GS 2.0 Total Gate Charge (V = -4.5V) Q nC GS g 4.1 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -0.9A DS D 0.5 Gate-Source Charge Q nC gs 0.8 Gate-Drain Charge Q nC gd 3.6 Turn-On Delay Time t ns D(ON) 3.8 Turn-On Rise Time t ns R V = -30V, V = -10V, DD GS Turn-Off Delay Time 12.3 ns I = -1.0A, R = 6 t D g D(OFF) Turn-Off Fall Time 7.3 ns t F Body Diode Reverse Recovery Time 8.2 ns t I = -1.0A, di/dt = -100A/s RR S Body Diode Reverse Recovery Charge 2.7 nC Q I = -1.0A, di/dt = -100A/s RR S Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6350SQ July 2018 Diodes Incorporated www.diodes.com Document number: DS41140 Rev. 2 - 2