DMP68D0LFB 65V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 8 VGS = -5V -318mA Low Input/Output Leakage -65V 18 VGS = -2.5V -212mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMP68D0LFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -65 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -192 mA Continuous Drain Current (Note 5) VGS = -5V ID State -153 TA = +70C Steady TA = +25C -318 Continuous Drain Current (Note 6) V = -5V I mA GS D State -254 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -800 mA DM Maximum Body Diode Continuous Current (Note 6) I -318 mA S Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 0.5 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 251 C/W A JA Power Dissipation (Note 6) P 1.21 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 103 C/W A JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -65 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1.0 A V = -65V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.8 -2.1 V V = V , I = -250A GS(TH) DS GS D 2.0 8 VGS = -5V, ID = -100mA Static Drain-Source On-Resistance R DS(ON) 4.7 18 VGS = -2.5V, ID = -10mA Diode Forward Voltage -0.8 -1.5 V VSD VGS = 0V, IS = -100mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 36 Ciss V = -30V, V = 0V, DS GS Output Capacitance 3.9 pF Coss f = 1.0MHz Reverse Transfer Capacitance C 2.1 rss Gate Resistance R 247 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 4.1 g V = -5V, V = -30V, GS DS Gate-Source Charge Q 1.3 nC gs I = -100mA D Gate-Drain Charge Q 1.3 gd Turn-On Delay Time 12.2 tD(ON) Turn-On Rise Time 10.6 tR V = -5V, V = -30V, GS DS ns Turn-Off Delay Time 33.2 R = 50, I = -100mA tD(OFF) G D Turn-Off Fall Time 18.9 tF Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMP68D0LFB August 2020 Diodes Incorporated www.diodes.com Document number: DS42866 Rev. 1 - 2