X-On Electronics has gained recognition as a prominent supplier of DMP68D0LFB-7B MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP68D0LFB-7B MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP68D0LFB-7B Diodes Incorporated

DMP68D0LFB-7B electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMP68D0LFB-7B
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 61V~100V X2-DFN1006-3 T&R 10K
Datasheet: DMP68D0LFB-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.36 ea
Line Total: USD 0.36 
Availability - 6407
Ship by Mon. 23 Sep to Wed. 25 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
126
Ship by Tue. 24 Sep to Fri. 27 Sep
MOQ : 5
Multiples : 5
5 : USD 0.0708
50 : USD 0.0691
150 : USD 0.0679
500 : USD 0.0667

6407
Ship by Mon. 23 Sep to Wed. 25 Sep
MOQ : 1
Multiples : 1
1 : USD 0.36
10 : USD 0.2473
100 : USD 0.1012
1000 : USD 0.0632
2500 : USD 0.0586
10000 : USD 0.0541
20000 : USD 0.0495
50000 : USD 0.0448
100000 : USD 0.0426

   
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We are delighted to provide the DMP68D0LFB-7B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP68D0LFB-7B and other electronic components in the MOSFETs category and beyond.

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DMP68D0LFB 65V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 8 VGS = -5V -318mA Low Input/Output Leakage -65V 18 VGS = -2.5V -212mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMP68D0LFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -65 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -192 mA Continuous Drain Current (Note 5) VGS = -5V ID State -153 TA = +70C Steady TA = +25C -318 Continuous Drain Current (Note 6) V = -5V I mA GS D State -254 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -800 mA DM Maximum Body Diode Continuous Current (Note 6) I -318 mA S Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 0.5 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 251 C/W A JA Power Dissipation (Note 6) P 1.21 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 103 C/W A JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -65 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1.0 A V = -65V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.8 -2.1 V V = V , I = -250A GS(TH) DS GS D 2.0 8 VGS = -5V, ID = -100mA Static Drain-Source On-Resistance R DS(ON) 4.7 18 VGS = -2.5V, ID = -10mA Diode Forward Voltage -0.8 -1.5 V VSD VGS = 0V, IS = -100mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 36 Ciss V = -30V, V = 0V, DS GS Output Capacitance 3.9 pF Coss f = 1.0MHz Reverse Transfer Capacitance C 2.1 rss Gate Resistance R 247 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 4.1 g V = -5V, V = -30V, GS DS Gate-Source Charge Q 1.3 nC gs I = -100mA D Gate-Drain Charge Q 1.3 gd Turn-On Delay Time 12.2 tD(ON) Turn-On Rise Time 10.6 tR V = -5V, V = -30V, GS DS ns Turn-Off Delay Time 33.2 R = 50, I = -100mA tD(OFF) G D Turn-Off Fall Time 18.9 tF Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMP68D0LFB August 2020 Diodes Incorporated www.diodes.com Document number: DS42866 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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