DMPH1006UPSQ Green 12V 175C P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature Environments ID BVDSS RDS(ON) 100% Unclamped Inductive Switching Ensures More Reliable T = +25C C and Robust End Application 6m V = -4.5V -80A GS -12V High Conversion Efficiency 8m V = -2.5V -70A GS Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to meet the stringent requirements of The DMPH1006UPSQ is suitable for automotive applications automotive applications. It is qualified to AEC-Q101, supported by a requiring specific change control this part is AEC-Q101 PPAP and is ideal for use in: qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Notebook Battery Power Management DMPH1006UPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS T = +25C -80 C Continuous Drain Current (Note 7) V = -4.5V I A GS D -60 TC = +100C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -140 A IDM Maximum Continuous Body Diode Forward Current (Note 6) -3.6 A IS Avalanche Current, L=0.1mH (Note 8) -18 A IAS Avalanche Energy, L=0.1mH (Note 8) -17 mJ EAS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.8 W PD Steady State 86 Thermal Resistance, Junction to Ambient (Note 5) C/W RJA t<10s 74 Total Power Dissipation (Note 6) 3.2 W PD Steady State 47 Thermal Resistance, Junction to Ambient (Note 6) RJA t<10s 40 C/W Thermal Resistance, Junction to Case (Note 7) 1.0 RJC Operating and Storage Temperature Range -55 to +175 C TJ, TSTG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -12 V BVDSS VGS = 0V, ID = -250A Zero Gate Voltage Drain Current -1 A IDSS VDS = -12V, VGS = 0V Gate-Source Leakage 100 nA IGSS VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -0.4 -1 V VGS(TH) VDS = VGS, ID = -250A 4 6 VGS = -4.5V, ID = -15A Static Drain-Source On-Resistance R m DS(ON) 5 8 VGS = -2.5V, ID = -10A Diode Forward Voltage VSD -0.7 -1.1 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 6,334 iss VDS = -10V, VGS = 0V 1094 Output Capacitance C pF oss f = 1MHz 895 Reverse Transfer Capacitance C rss 3.5 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 124 Total Gate Charge (VGS = -8V) Qg 72 Total Gate Charge (VGS = -4.5V) Qg nC V = -10V, I = -20A DD D Gate-Source Charge 9 Qgs Gate-Drain Charge 17 Qgd Turn-On Delay Time 11 tD(ON) Turn-On Rise Time 21 tR V = -4.5V, V = -10V, GS DD ns 105 Turn-Off Delay Time t Rg = 1, ID = -10A D(OFF) 94 Turn-Off Fall Time t F 27 Reverse Recovery Time t ns I = -10A, di/dt = -100A/s RR F 10 Reverse Recovery Charge Q nC I = -10A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH1006UPSQ January 2021 Diodes Incorporated www.diodes.com Document number: DS39099 Rev. 2 - 2