DMPH4013SK3 Green 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Rated to +175C Ideal for High Ambient Temperature D BV R DSS DS(ON) MAX T = +25C Environments C 15m V = -10V -55A 100% Unclamped Inductive Switch (UIS) Test in Production GS -40V 23m V = -4.5V -50A Low On-Resistance GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance An Automotive-Compliant Part is Available Under Separate (R ) and yet maintain superior switching performance, making it DS(ON) Datasheet (DMPH4013SK3Q) ideal for high-efficiency power management applications. Mechanical Data Applications Case: TO252 (DPAK) Reverse Polarity Protection Case Material: Molded Plastic, Green Molding Compound. UL Motor Control Flammability Classification Rating 94V-0 Power Management Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D TO252 (DPAK) D G D G S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMPH4013SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMPH4013SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -55 C Continuous Drain Current (Note 6) V = -10V I A GS D State -40 T = +100C C Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) -120 A I DM Maximum Body Diode Forward Current (Note 6) -3.6 A I S Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) I -120 A SM Avalanche Current, L = 0.1mH (Note 7) I -40 A AS Avalanche Energy, L = 0.1mH (Note 7) E 69 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.1 W D Steady state Thermal Resistance, Junction to Ambient (Note 5) 71 C/W R JA Total Power Dissipation (Note 6) P 3.7 W D Steady state Thermal Resistance, Junction to Ambient (Note 6) 41 R JA C/W Thermal Resistance, Junction to Case 1.7 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 10 15 V = -10V, I = -10A GS D Static Drain-Source On-Resistance R m DS(ON) 15 23 VGS = -4.5V, ID = -8A Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 4004 C iss V = -20V, V = 0V DS GS Output Capacitance 309 pF C oss f = 1MHz Reverse Transfer Capacitance C 229 rss Gate Resistance R 3.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -4.5V) Q 31 GS g Total Gate Charge (V = -10V) Q 67 GS g nC V = -20V, I = -10A DS D Gate-Source Charge Q 13.2 gs Gate-Drain Charge Q 11 gd Turn-On Delay Time 9.9 tD(ON) Turn-On Rise Time 32 t V = -10V, V = -20V, R GS DD ns Turn-Off Delay Time 46 R = 3, I = -10A t G D D(OFF) Turn-Off Fall Time 53 t F 19.5 Reverse Recovery Time t ns I = -10A, di/dt = -100A/s RR F 11.6 Reverse Recovery Charge Q nC I = -10A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH4013SK3 May 2018 Diodes Incorporated www.diodes.com Document number: DS38685 Rev. 2 - 2