Green
DMPH4015SK3Q
175C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I
D Rated to +175C Ideal for High Ambient Temperature
BV R
DSS DS(ON) Max
T = +25C
C
Environments
-45A
11m @ V = -10V
GS
100% Unclamped Inductive Switch (UIS) Test in Production
-40V
15m @ V = -4.5V -40A
GS
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description and Applications
Halogen and Antimony Free. Green Device (Note 3)
This MOSFET has been designed to meet the stringent requirements
Qualified to AEC-Q101 Standards for High Reliability
of automotive applications. It is qualified to AEC-Q101, supported by
PPAP Capable (Note 4)
a PPAP and is ideal for use in:
Mechanical Data
Reverse Polarity Protection
Case: TO252 (DPAK)
Motor Control
Case Material: Molded Plastic, Green Molding Compound. UL
Power Management
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
TO252 (DPAK)
D
G
D
G S
S
Top View
Top View
Equivalent Circuit
Pin-Out
Ordering Information (Note 5)
Part Number Case Packaging
DMPH4015SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMPH4015SK3Q
Maximum Ratings (@ T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V -40 V
DSS
Gate-Source Voltage V 25 V
GSS
Steady T = +25C -45
C
I A
D
State -35
T = +100C
C
Continuous Drain Current (Note 7) V = -10V
GS
Steady T = +25C -14
A
A
I
D
State -10
T = +100C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A
DM
Maximum Body Diode Forward Current (Note 7) I -5.5 A
S
Avalanche Current, L = 1mH (Note 8) I -22 A
AS
Avalanche Energy, L = 1mH (Note 8) E 260 mJ
AS
Thermal Characteristics (@ T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 1.7 W
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 6) R 73 C/W
JA
Total Power Dissipation (Note 7) 3.3 W
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 7) R 38
JA
C/W
Thermal Resistance, Junction to Case 1.0
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@ TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current -1 A
I V = -40V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 25V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage -1.5 -2 -2.5 V
V V = V , I = -250A
GS(TH) DS GS D
8 11
V = -10V, I = -9.8A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
11 15
V = -4.5V, I = -9.8A
GS D
Diode Forward Voltage V -0.7 -1 V V = 0V, I = -1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 4234
iss
V = -20V, V = 0V
DS GS
Output Capacitance C 1036 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 526
rss
Gate Resistance R 7.8 V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge (V = -4.5V) Q 42.7
GS g
Total Gate Charge (V = -10V) 91
GS Q V = -20V,
g DS
nC
Gate-Source Charge 14.2 I = -9.8A
Q D
gs
Gate-Drain Charge 13.5
Q
gd
Turn-On Delay Time 13.2
t
D(ON)
Turn-On Rise Time t 10 V = -10V, V = -20V,
R GS DD
ns
Turn-Off Delay Time t 303 R = 6, I = -1A
D(OFF) G D
Turn-Off Fall Time t 138
F
26
Reverse Recovery Time t ns I = -9.8A, di/dt = -100A/s
RR F
20
Reverse Recovery Charge Q nC I = -9.8A, di/dt = -100A/s
RR F
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMPH4015SK3Q April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38125 Rev. 2 - 2