X-On Electronics has gained recognition as a prominent supplier of DMPH4015SK3Q-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMPH4015SK3Q-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMPH4015SK3Q-13 Diodes Incorporated

DMPH4015SK3Q-13 electronic component of Diodes Incorporated
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Part No.DMPH4015SK3Q-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMPH4015SK3Q-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.265 ea
Line Total: USD 1.26 
Availability - 2375
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0238
10 : USD 0.9971
30 : USD 0.98
100 : USD 0.9609

2375
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 1.0241
100 : USD 0.7172
500 : USD 0.5797
1000 : USD 0.5357
2500 : USD 0.4895
25000 : USD 0.4763

   
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We are delighted to provide the DMPH4015SK3Q-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMPH4015SK3Q-13 and other electronic components in the MOSFETs category and beyond.

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Green DMPH4015SK3Q 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Rated to +175C Ideal for High Ambient Temperature BV R DSS DS(ON) Max T = +25C C Environments -45A 11m @ V = -10V GS 100% Unclamped Inductive Switch (UIS) Test in Production -40V 15m @ V = -4.5V -40A GS Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This MOSFET has been designed to meet the stringent requirements Qualified to AEC-Q101 Standards for High Reliability of automotive applications. It is qualified to AEC-Q101, supported by PPAP Capable (Note 4) a PPAP and is ideal for use in: Mechanical Data Reverse Polarity Protection Case: TO252 (DPAK) Motor Control Case Material: Molded Plastic, Green Molding Compound. UL Power Management Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper e3 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D TO252 (DPAK) D G D G S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 5) Part Number Case Packaging DMPH4015SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH4015SK3Q Maximum Ratings (@ T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -45 C I A D State -35 T = +100C C Continuous Drain Current (Note 7) V = -10V GS Steady T = +25C -14 A A I D State -10 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -100 A DM Maximum Body Diode Forward Current (Note 7) I -5.5 A S Avalanche Current, L = 1mH (Note 8) I -22 A AS Avalanche Energy, L = 1mH (Note 8) E 260 mJ AS Thermal Characteristics (@ T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.7 W P D Steady state Thermal Resistance, Junction to Ambient (Note 6) R 73 C/W JA Total Power Dissipation (Note 7) 3.3 W P D Steady state Thermal Resistance, Junction to Ambient (Note 7) R 38 JA C/W Thermal Resistance, Junction to Case 1.0 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -40V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.5 -2 -2.5 V V V = V , I = -250A GS(TH) DS GS D 8 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance R m DS(ON) 11 15 V = -4.5V, I = -9.8A GS D Diode Forward Voltage V -0.7 -1 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 4234 iss V = -20V, V = 0V DS GS Output Capacitance C 1036 pF oss f = 1MHz Reverse Transfer Capacitance C 526 rss Gate Resistance R 7.8 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = -4.5V) Q 42.7 GS g Total Gate Charge (V = -10V) 91 GS Q V = -20V, g DS nC Gate-Source Charge 14.2 I = -9.8A Q D gs Gate-Drain Charge 13.5 Q gd Turn-On Delay Time 13.2 t D(ON) Turn-On Rise Time t 10 V = -10V, V = -20V, R GS DD ns Turn-Off Delay Time t 303 R = 6, I = -1A D(OFF) G D Turn-Off Fall Time t 138 F 26 Reverse Recovery Time t ns I = -9.8A, di/dt = -100A/s RR F 20 Reverse Recovery Charge Q nC I = -9.8A, di/dt = -100A/s RR F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH4015SK3Q April 2016 Diodes Incorporated www.diodes.com Document number: DS38125 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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