DMPH6050SK3Q Green Q 60V +175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I max Rated to +175C Ideal for High Ambient Temperature D BV R max DSS DS(ON) T = +25C C Environments 50m V = -10V -23.6A GS 100% Unclamped Inductive Switching Ensures More Reliable -60V 70m V = -4.5V -20A and Robust End Application GS Low Q Minimizes Switching Loss g Low R Minimizes On State Loss DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: TO252 (DPAK) automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Engine Management Systems Terminal Finish - Matte Tin Annealed over Copper Leadframe. Body Control Electronics Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.315 grams (Approximate) TO252 (DPAK) D G S Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMPH6050SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH6050SK3Q Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -23.6 C I A D State -19 T = +70C C Continuous Drain Current (Note 7) V = -10V GS Steady T = +25C -7.2 A A I D State -6.0 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -40 A DM Maximum Continuous Body Diode Forward Current (Note 7) I -3.8 A S Avalanche Current (Note 8) L = 0.1mH I -25 A AS Avalanche Energy (Note 8) L = 0.1mH E 31 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) 1.9 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 80 C/W JA Total Power Dissipation (Note 7) 3.8 W P D Steady State Thermal Resistance, Junction to Ambient (Note 7) R 39 JA C/W Thermal Resistance, Junction to Case (Note 7) 3 R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 50 VGS = -10V, ID = -7A Static Drain-Source On-Resistance R m DS(ON) 70 V = -4.5V, I = -7A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance pF C 1,377 iss V = -30V, V = 0V, DS GS Output Capacitance pF C 87 oss f = 1MHz Reverse Transfer Capacitance pF C 68 rss 12 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 12 Total Gate Charge (V = -4.5V) Q nC GS g 25 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -5A DS D 3.8 Gate-Source Charge Q nC gs 4.9 Gate-Drain Charge nC Qgd Turn-On Delay Time 5.3 ns t D(ON) Turn-On Rise Time 8.6 ns t V = -30V, V = -10V, R DS GS Turn-Off Delay Time 49.4 ns t RG = 3, ID = -5A D(OFF) Turn-Off Fall Time 29.7 ns t F Body Diode Reverse Recovery Time 14.2 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 7.9 nC RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH6050SK3Q June 2016 Diodes Incorporated www.diodes.com Document number: DS37293 Rev. 5 - 2 ADVANCED INFORMATION