DMPH6250SQ 60V 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175CIdeal for High Ambient Temperature I Max D Environments BV R Max DSS DS(ON) T = +25C A Low On-Resistance 155m V = -10V -2.4A Low Input Capacitance GS -60V Fast Switching Speed 240m V = -4.5V -1.9A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT23 automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP, and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Battery Charging e3 Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Load Switch Weight: 0.008 grams (Approximate) D D G G S S Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMPH6250SQ-7 SOT23 3000/Tape & Reel DMPH6250SQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMPH6250SQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -2.4 A A Continuous Drain Current (Note 7) V = -10V I GS D State -1.5 T = +100C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -13 A I DM Maximum Continuous Body Diode Forward Current (Note 7) A I -1.6 S Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) I -13 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 0.92 W P D 165 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Power Dissipation (Note 7) P 1.62 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 93.1 C/W A JA Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -1.9 -3.0 V V = V , I = -250A GS(TH) DS GS D 112 155 V = -10V, I = -2A GS D Static Drain-Source On-Resistance m R DS(ON) 149 240 V = -4.5V, I = -2A GS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 512 pF iss V = -30V, V = 0V, DS GS Output Capacitance 31.3 pF C oss f = 1.0MHz Reverse Transfer Capacitance 23.2 pF C rss Gate Resistance 11.9 R V = 0V, V = 0V, f = 1MHz g DS GS 4.0 nC Total Gate Charge (V = -4.5V) Q GS g Total Gate Charge (V = -10V) Q 8.3 nC GS g VDS = -30V, ID = -2A Gate-Source Charge Q 1.2 nC gs Gate-Drain Charge Q 1.7 nC gd Turn-On Delay Time t 12.5 ns D(ON) Turn-On Rise Time t 13.4 ns R V = -30V, V = -10V, DD GS Turn-Off Delay Time t 96.0 ns I = -1.0A, R = 50 D(OFF) D G Turn-Off Fall Time 39.1 ns t F Body Diode Reverse Recovery Time ns t 9.6 I = -1A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge nC Q 3.1 I = -1A, di/dt = 100A/s RR F Notes: 6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH6250SQ May 2018 Diodes Incorporated www.diodes.com Document number: DS40279 Rev. 3 - 2