DMS2085LSD P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE Product Summary Features and Benefits Low Input Capacitance MOSFET V R I MOSFET with Low R Minimize Conduction Losses (BR)DSS DS(on) max D DS(ON) 85m V = -10V -3.3A GS Schottky Diode with Low Forward Voltage Drop -20V -2.8A 125m V = -4.5V GS Fast Switching Speed SCHOTTKY DIODE Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) V V I R F max O Halogen and Antimony Free. Green Device (Note 3) 400mV I = 0.5A F 20V 1.0A Qualified to AEC-Q101 Standards for High Reliability 470mV I = 1.0A F Mechanical Data Description Case: SO-8 This new generation MOSFET has been designed to minimize the on- Case Material: Molded Plastic, Green Molding Compound. state resistance (R ) and yet maintain superior switching DS(ON) UL Flammability Classification Rating 94V-0 performance, making it ideal for high efficiency power management Moisture Sensitivity: Level 1 per J-STD-020 applications. Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe Applications e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) Power Management Functions Backlighting D A A K A K S D G G D S K Top View Top View Internal Schematic D1 Schottky Diode Q1 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMS2085LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMS2085LSD Maximum Ratings P-CHANNEL MOSFET Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A -3.3 I A D State -2.7 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C -4.3 A t<10s I A D -3.4 T = +70C A Maximum Body Diode Forward Current (Note 6) I -1.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -11.2 A DM Avalanche Current (Notes 7) L = 5mH I -5 A AR Avalanche Energy (Notes 7) L = 5mH 50 mJ E AR Maximum Ratings SCHOTTKY D1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage 20 V V RWM DC Blocking Voltage V R Average Rectified Output Current (Note 7, t<10s) I 1 A O Peak Repetitive Forward Current (Note 7, t<10s) I 2 A FRM Non-Repetitive Peak Forward Surge Current (Note 7, t<10s) I 20 A FSM Single half sine-wave superimposed on rated load Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.1 A Total Power Dissipation (Note 5) P W D T = +70C 1.8 A Steady state 108 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 65 T = +25C 1.8 A Total Power Dissipation (Note 6) P W D 2.3 T = +70C A Steady state 78 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) 22 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG 2 of 7 August 2014 DMS2085LSD Diodes Incorporated www.diodes.com Document number: DS36926 Rev. 2 - 2 ADVANCE INFORMATION NEW PRODUCT