DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER Features Mechanical Data Low On-Resistance Case: U-DFN3020-8 Type B Case Material: Molded Plastic, Green Molding Compound. UL 95m V = -4.5V GS Flammability Classification Rating 94V-0 120m V = -2.5V GS Moisture Sensitivity: Level 1 per J-STD-020 150m (typ) V = -1.8V GS Terminal Connections: See Diagram Low Gate Threshold Voltage, -1.3V Max Terminals: Finish NiPdAu annealed over Copper leadframe. Fast Switching Speed e4 Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Weight: 0.011 grams (approximate) Incorporates Low V Super Barrier Rectifier (SBR) F Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability S K G U-DFN3020-8 K A Type B K A D S D G A D Bottom View Top View Bottom View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMS2120LFWB-7 DFN3020B-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMS2120LFWB Maximum Ratings TOTAL DEVICE ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.5 W D Thermal Resistance, Junction to Ambient 85 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Maximum Ratings P-CHANNEL MOSFET Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) I -2.9 A D Pulsed Drain Current (Note 6) I -10 A DM Maximum Ratings SBR D1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 20 V RWM DC Blocking Voltage V R RMS Reverse Voltage 14 V V R(RMS) Average Rectified Output Current 1 A I O Non-Repetitive Peak Forward Surge Current I 3 A FSM 8.3ms single half sine-wave superimposed on rated load Electrical Characteristics P-CHANNEL MOSFET Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 I A V = -20V, V = 0V DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.45 -1.3 V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -2.8A GS D 70 95 Static Drain-Source On-Resistance R 84 120 m V = -2.5V, I = -2.0A DS (ON) GS D 100 150 V = -1.8V, I = -1.0A GS D Forward Transfer Admittance 8 S Y V = -5V, I = -2.8A fs DS D Diode Forward Voltage (Note 7) 0.42 -1.2 V V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 632 pF C iss V = -10V, V = 0V DS GS Output Capacitance 65 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 54 pF rss Electrical Characteristics SBR D1 ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) 20 V V I = 1mA (BR)R R 0.45 I = 0.5A F Forward Voltage V V F 0.52 I = 1.0A F Reverse Current (Note 7) I 80 A V = 20V R R Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. SBR is a registered trademark of Diodes Incorporated. 2 of 7 September 2012 DMS2120LFWB Diodes Incorporated www.diodes.com Document number: DS31667 Rev. 5 - 2 NEW PRODUCT