NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: I max D BV R max DSS DS(ON) Low R minimize conduction losses DS(ON) T = +25C A Low V reducing the losses due to body diode conduction SD 13m V = 10V 9.5A GS Low Q lower Q of the integrated Schottky reduces body RR RR 30V diode switching losses 14m V = 4.5V 9.0A GS Low gate capacitance (Q /Q ) ratio reduces risk of shoot- g gs through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) Rated 100% R Tested g Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMS3014SFGQ) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: PowerDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Drain Pin 1 S 8 7 6 5 S S G Gate D D D D 1 2 3 4 Source Top View Bottom View Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMS3014SFG-7 PowerDI3333-8 2000/Tape & Reel DMS3014SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3014SFG Marking Information S29 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) S29 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 9.5 A A I D State 7.6 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 13.0 A t<10s A I D 9.7 T = +70C A Steady T = +25C 9.0 A I A D State 7.4 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 12.2 A t<10s A I D 9.3 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3.0 A S Avalanche Current (Note 7) L = 0.1mH I 30 A AR Repetitive Avalanche Energy (Note 7) L = 0.1mH E 45 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1 W D Steady State 131 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 72 C/W Total Power Dissipation (Note 6) P 2.1 W D Steady State 63 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 6) 7.1 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 2 of 8 DMS3014SFG August 2018 Diodes Incorporated www.diodes.com Document number: DS35594 Rev. 7 - 3 YYWW