NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary DIOFET Utilizes a Unique Patented Process to Monolithically Integrate a MOSFET and a Schottky in a Single Die to Deliver: I MAX D BV R MAX DSS DS(ON) Low R - Minimizes Conduction Losses DS(ON) T = +25C A Ultra Low V - Reduce Losses due to Body Diode SD Conduction 13m V = 10V 8.9A GS Low Q - Lower Q of the Integrated Schottky Reduces 30V rr rr Body Diode Switching Losses 16m V = 4.5V 8.0A GS Low Gate Capacitance (Q /Q ) Ratio Reduces Risk of g gs Shoot-Through or Cross Conduction Currents at High Frequencies Avalanche Rugged I and E Rated AR AR Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability DS(ON) ideal for high efficiency power management applications. Mechanical Data Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper DC-DC Converters Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) S D S D S D G D Top View Top View Equivalent circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMS3016SSSA-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - DMS3016SSSA NO ALTERNATE PART Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 8.0 A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 5.8 T = +85C A Pulsed Drain Current (Note 6) 90 A I DM Avalanche Current (Notes 6 & 7) 13 A I AR Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH 25.4 mJ E AR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.54 W P D 81 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 mA V = 30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 2.3 V VGS(TH) VDS = VGS, ID = 250A 9 13 V = 10V, I = 9.8A GS D Static Drain-Source On-Resistance R m DS(ON) 11 16 V = 4.5V, I = 9.8A GS D Forward Transfer Admittance 11 - s Y V = 5V, I = 9.8A fs DS D Diode Forward Voltage 0.35 0.6 V V V = 0V, I = 1A SD GS S Maximum Body-Diode + Schottky Continuous Current 5 A - I S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1849 pF iss V =15V, V = 0V, DS GS Output Capacitance C 158 pF oss f = 1.0MHz Reverse Transfer Capacitance C 123 pF rss Gate Resistance R 0.53 2.68 4.82 V =0V, V = 0V, f = 1MHz g DS GS 18.5 nC Total Gate Charge VGS = 4.5V Qg 43 nC Total Gate Charge V = 10V Q V = 15V, V = 10V, GS g DS GS Gate-Source Charge 4.7 nC I = 9.8A Q D gs Gate-Drain Charge 4.0 nC Q gd Turn-On Delay Time 6.62 ns t D(on) Turn-On Rise Time 8.73 ns t V = 10V, V = 10V, r GS DS Turn-Off Delay Time t 36.41 ns R = 3, R = 1.2 D(off) g L Turn-Off Fall Time t 4.69 ns f Notes: 5. Device mounted on minimum recommended layout. The value in any given application depends on the users specific board design. 6. Repetitive rating, pulse width limited by junction temperature. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 August 2018 DMS3016SSSA www.diodes.com Diodes Incorporated Document number: DS35073 Rev. 3 - 3