DMT10H009LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C Low R Minimizes Power Losses DS(ON) 90A 9m VGS = 10V Low Q Minimizes Switching Losses g 100V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 13m V = 4.5V 76A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description manufactured in IATF 16949 certified facilities), please This new generation MOSFET features low on-resistance and fast contact us or your local Diodes representative. switching, making it ideal for high efficiency power management DMT10H009LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS 90 T = +25C C A Continuous Drain Current, VGS = 10V ID 73 TC = +70C 360 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM Maximum Continuous Body Diode Forward Current (Note 6) 91 A IS 360 A Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) ISM Avalanche Current, L = 0.3mH 21 A IAS Avalanche Energy, L = 0.3mH E 66.2 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.7 W PD Steady State Thermal Resistance, Junction to Ambient (Note 5) R 71 C/W JA Total Power Dissipation (Note 6) P 3 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 40 JA C/W Thermal Resistance, Junction to Case R 1.1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.2 2.5 V VGS(TH) VDS = VGS, ID = 250A 6.7 9 VGS = 10V, ID = 20A Static Drain-Source On-Resistance R m DS(ON) 9.1 13 VGS = 4.5V, ID = 5A Diode Forward Voltage 0.8 1.3 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2309 Ciss V = 50V, V = 0V DS GS Output Capacitance C 536 pF oss f = 1MHz Reverse Transfer Capacitance C 15.7 rss Gate Resistance R 1.9 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 20 g V = 50V, I = 20A, DD D Gate-Source Charge Q 7.0 nC gs VGS = 4.5V Gate-Drain Charge Q 8.5 gd Turn-On Delay Time 5.4 tD(ON) Turn-On Rise Time 10.6 tR V = 50V, V = 10V, DD GS ns Turn-Off Delay Time 28.3 tD(OFF) ID = 20A, Rg = 3 Turn-Off Fall Time 14.9 tF Reverse Recovery Time t 44.3 ns RR IF = 20A, di/dt = 100A/s Reverse Recovery Charge Q 65.5 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H009LK3 November 2019 Diodes Incorporated www.diodes.com Document number: DS42130 Rev. 3 - 2